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參數(shù)資料
| 型號(hào)： | XX1000-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler |
| 中文描述： | 7.5-25.0/15.0-50.0 GHz的砷化鎵單片有源倍頻器 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 311K |
| 代理商： | XX1000-BD-EV1 |
Page 4 of 6
App Note [1] Biasing
-
It is recommended to separately bias each doubler stage with fixed voltages of Vd(1,2)=5.0V, Vss=-5.0V and
Vg1=-0.6V. The typical DC currents are Id1=80mA, Id2=140mA and Iss=50mA. Vg2 can be used for active control biasing of Vd2, or it
can be left open and Vd2 will self bias at approximately 140mA. Maximum output power is achieved with Vss=-5.0V and Iss=50mA
but the device will operate with reduced bias to Vss=-2.0V and Iss=25mA. It is also recommended to use active biasing on Vd2 with
Vg2 to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to
maintain correct drain current and thus drain voltage. The typical gate voltage for Vg2=-0.1V. Typically the gate is protected with
Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available
before applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2, Vss and Vg1, 2) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 26-Mar-07
X1000-BD
MTTF
Bias Conditions:
Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
55
65
75
85
95
Temperature (°C)
M
MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.
Bias Conditions: Vd1,2 = 5.0V, Id1,2 = 220 mA, Vss = -5.0V, Iss = 50 mA
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| XX1000-QT_07 | 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT-0G0T | 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT-EV1 | 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT | 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT-0G00 | 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XX1000-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT_08 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm |
| XX1000-QT_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:7.5-22.5/15.0-45.0 GHz Active Doubler |
| XX1000-QT-0G00 | 制造商:M/A-COM Technology Solutions 功能描述:FREQUENCY MULTIPLIER 制造商:M/A-COM Technology Solutions 功能描述:ACTIVE DOUBLER QFN, 3X3 MM, 7.5-22.5/15.0-45.0 GHZ |
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