參數(shù)資料
型號(hào)： XU425
廠商： CALOGIC LLC
元件分類： 小信號(hào)晶體管
英文描述： N-Channel Dual JFET
中文描述： 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
文件頁數(shù)： 2/2頁
文件大小： 28K
代理商： XU425
U421 – U426
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-to-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
40V
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Device Dissipation (Each Side), T
A
= 25
o
C
(Derate 3.2 mW/
o
C to 150
o
C). . . . . . . . . . . . . . 400mW
Total Device Dissipation, T
A
= 25
o
C
(Derate 6.0 mW/
o
C to 150
o
C). . . . . . . . . . . . . 750 mW
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +150
o
C
SYMBOL
CHARACTERISTIC
U421-3
TYP
U424-6
TYP
UNIT
TEST CONDITIONS
MIN
MAX
MIN
MAX
STATIC
BV
GSS
Gate-Source Breakdown Voltage
-40
-60
-40
-60
V
I
G
= -1
μ
A, V
DS
= 0
I
G
= -1
μ
A, I
D
= 0, I
S
= 0
T = +25
o
C
T = +125
o
C
T = +25
o
C
T = +125
o
C
BV
G1G2
Gate-Gate Breakdown Voltage
±
40
±
40
I
GSS
Gate Reverse Current
(1)
1.0
3.0
pA
V
GS
= -20V,
V
DS
= 0
1.0
3.0
nA
I
G
Gate Operating Current
(1)
.25
0.5
pA
V
DG
= 10V,
I
D
= 30
μ
A
.250
-500
V
GS (off)
Gate-Source Cutoff Voltage
-0.4
-2.0
-0.4
-2.0
V
V
DS
= 10V, I
D
= 1nA
V
DG
= 10V, I
D
= 30
μ
A
V
GS
Gate-Source Voltage
-1.8
-2.9
I
DSS
Saturation Drain Current
60
1000
60
1800
μ
A
V
DS
= 10V, V
GS
= 0
DYNAMIC
g
fs
Common-Source Forward Transconductance
300
1500
300
1500
V
DS
= 10V,
V
GS
= 0
f = 1 kHz
g
os
Common-Source Output Conductance
10
10
C
iss
Common-Source Input Capacitance
3.0
3.0
pF
f = 1MHz
C
rss
Common-Source Reverse Transfer Capacitance
1.5
1.5
g
fs
Common-Source Forward Transconductance
120
350
120
350
V
DG
= 10V,
I
D
= 30
μ
A
f = 1kHz
g
os
Common-Source Output Conductance
3.0
3.0
e
n
Equivalent Short Circuit Input
20
70
20
70
nV/ Hz
f = 10Hz
10
10
f = 1kHz
NF
Noise Figure
1.0
1.0
dB
f = 10 Hz
R
G
= 10 M
SYMBOL
CHARACTERISTIC
U421,4
U422,5
U423,6
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
MATCH
| V
GS1
-V
GS2
| Differential Gate-Source Voltage
10
15
25
mV
V
DG
= 10V, I
D
= 30
μ
A
V
DG
= 10V, I
D
= 30
μ
A,
T
A
= -55
o
C, T
B
= 25
o
C,
T
C
= 125
o
C
I
D
= 30
μ
A, V
DG
= 10 to 20 V
| V
GS1
-V
GS2
|
T
Differential Gate-Source Voltage
Change with Temperature
10
25
40
V/
o
C
C
MRR
Common Mode Rejection Ratio
(3)
90
95
80
90
80
90
dB
NOTES:
1. Approximately doubles for every 10
o
C increase in T
A
.
2. Measured at endpoints T
A
, T
B
and T
C
.
3. CMRR = 20log
10
[
]
V
DD
= 10V.
V
GS1
-V
GS2
4. Case lead not connected.
V
DD
ELECTRICAL CHARACTERISTICS
(25oC unless otherwise noted)
o
C Unless otherwise noted)
相關(guān)PDF資料
PDF描述
XU426 N-Channel Dual JFET
XU440 N-Channel JFET Monolithic Dual
XU441 N-Channel JFET Monolithic Dual
XU443 N-Channel JFET Monolithic Dual
XU444 N-Channel JFET Monolithic Dual
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XU426 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Dual JFET
XU440 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Monolithic Dual
XU441 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Monolithic Dual
XU443 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Monolithic Dual
XU444 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Monolithic Dual
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