Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
October 2006 - Rev 19-Oct-06
QFN, 7x7 mm
Mimix Broadband
’
s 36.0-42.0 GHz GaAs transmitter has a +17.0 dBm
output third order intercept across the band. This device is a balanced,
resistive pHEMT mixer followed by a distributed output amplifier and
includes an integrated LO doubler and LO buffer amplifier. The use of
integrated LO doubler and LO buffer amplifier makes the provision of
the LO easier than for fundamental mixers at these frequencies. I and Q
mixer inputs are provided and an external 90 degree hybrid is required
to select the desired sideband. This device uses Mimix Broadband
’
s
0.15
μ
m GaAs PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and uniformity.
This device is well suited for Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
36.0-42.0 GHz GaAs Transmitter
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Leakage @ RF Port LOx1
Leakage @ RF Port LOx2
Output Third Order Intercept (OIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2) Mixer, Doubler
Dynamic Range Control (Vc)
Supply Current (Id) (Vd=4.0V)
Supply Current (Ic)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
Page 1 of 8
Sub-harmonic, Image Reject Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+17.0 dBm Output Third Order Intercept (OIP3)
+2.0 dBm LO Drive Level
5.0 dB Conversion Gain
100% RF and DC Testing
Features
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBm
dBm
dBm
VDC
VDC
VDC
VDC
mA
mA
Min.
36.0
36.0
16.0
DC
-
-
-
-
-
-
-
-
-
-2.0
-
-
Typ.
-
-
-
-
10.0
5.0
+2.0
-25.0
-10.0
+17.0
+4.0
-0.4
-0.5
-
240
0.0
Max.
42.0
42.0
26.0
4.0
-
-
-
-
-
-
-
-
-
0.0
-
-
1,2
2
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
ESD - Human Body Model
ESD - Machine Body Model
+6.0 VDC
350 mA
+0.3 VDC
+0.0 dBm
-65 to +165 deg C
-55 to MTTF Table
1
MTTF Table
1
Class 1A
Class M1
(1) Channel temperature affects a device’s MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life
U1006-QB