參數(shù)資料
型號: XSD403
廠商: CALOGIC LLC
元件分類: 小信號晶體管
英文描述: High Speed DMOS N-Channel Switch
中文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: SORTED, DIE-3
文件頁數(shù): 2/3頁
文件大小: 35K
代理商: XSD403
SD403
C ORPORATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25
o
C unless otherwise noted)
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
+20V
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
+20V
Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (at or below T
A
= +25
o
C) . . . . . . . . 300mW
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
Operating Junction and Storage
Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
ELECTRICAL CHARACTERISTICS
(T
A
= +25
o
C unless otherwise specified)
SYMBOL
CHARACTERISTICS
MIN
TYP
MAX
UNIT
TEST CONDITIONS
STATIC
BV
DSS
Drain-Source Breakdown Voltage
15
25
V
I
D
= 1.0
μ
A, V
GS
=0
I
D(OFF)
Drain-Source OFF Leakage Current
1.0
μ
A
V
DS
= 15V, V
GS
= 0
I
GSS
Gate-Source Leakage Current
1.0
μ
A
V
GS
= 20V, V
DS
= 0
I
D(ON)
Drain-Source ON Current
80
120
mA
V
DS
= 10V, V
GS
= 10 V Pulse Test
V
GS(th)
Gate-Source Threshold Voltage
0.3
1.5
V
I
D
= 1.0
μΑ,
V
DS
= V
GS
V
DS(ON)
Drain-Source ON Voltage
140
175
mV
I
D
= 1mA, V
GS
= 2.4V
r
DS(ON)
Drain-Source ON Resistance
140
175
ohms
V
DS(ON)
Drain-Source ON Voltage
40
60
mV
I
D
= 1mA, V
GS
= 4.5V
r
DS(ON)
Drain-Source ON Resistance
40
60
ohms
DYNAMIC
gfs
Common-Source Forward Transconductance
15
19
mS
I
D
= 20mA V
DS
= 10V,
f = 1KHz Pulse Test
c
iss
Common-Source Input Capacitance
4.5
6.0
pf
V
DS
= 10V, V
GS
= 0
f = 1MHz
c
oss
Common-Source Output Capacitance
2.0
3.0
c
rss
Common-Source Reverse Transfer Capacitance
0.4
0.6
td(on)
Turn ON Delay Time
0.8
1.2
ns
V
DD
= 10V, R
L
= 680
V
G(ON)
= 10V, R
G
= 51
C
L
= 1.5pF
t
r
Rise Time
0.9
1.2
t
(OFF)
Turn OFF Time
1.4
SWITCHING TIMES TEST CIRCUIT
TEST WAVEFORMS
V
DD
R
L
V
OUT
R
G
510
51
V
G
OSCILLOSCOPE
r
INPUT PULSE
t 0.5 nSEC
PULSE WIDTH - 100 nSEC
SAMPLING OSCILLOSCOPE
t < 0.36 nSEC
R > 1M
C < 2.0 pF
V
10%
0
t
V
0V
G(on)
d(on)
on
r
~
t
t
DD
V
V
out
in
90%
90%
10%
t
t
t
off
fall
d(off)
90%
10%
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