參數(shù)資料
型號(hào)： XSD200
廠商： CALOGIC LLC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： High-Speed Analog N-Channel Enhancement-Mode DMOS FETS
中文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： DIE
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 27K
代理商： XSD200
SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203
CORPORATION
ABSOLUTE MAXIMUM RATING (TA = +25
oC unless otherwise noted)
PARAMETER
SD200
SD201
SD202
SD203
UNIT
Breakdown
Voltages
VDS
+25
+20
V
VDB
+25
+20
V
VGS
±40
-0.3
±40
-0.3
V
+20
V
VGB
±40
-0.3
±40
-0.3
V
+20
V
VGD
±40
-0.3
±40
-0.3
V
+20
V
ID
Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
PT
Power Dissipation (at or below TC = +25
oC) . . . . 1.8 W
Linear Derating Factor . . . . . . . . . . . . . . . . . 18 mW/
oC
PD
Power Dissipation (at or below TA = +25C) . . . 360 mW
Linear Derating Factor . . . . . . . . . . . . . . . . . 3.6 mW/
oC
Tj
Operating Junction
Temperature Range . . . . . . . . . . . . . . -55
oC to + 125oC
Ts
Storage Temperature Range . . . . . . . . -65
oC to +175oC
SYMBOL
PARAMETER
200, 201
202, 203
UNIT
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
STATIC
BVDS
Drain-Source Breakdown Voltage
25
30
20
25
V
ID = 1.0
A, VGS = VBS = 0
BVDB
Drain-Body Breakdown Voltage
25
20
V
ID = 1.0
A, VGB = 0
Source OPEN
ID(OFF)
Drain-Source
OFF Current
1.0
A
VDS = 25 V
VGS = VBS = 0
1.0
VDS = 20 V
IGBS
Gate-Body
Leakage
Current
SD200
±0.1
nA
VGV =
±40 V
VDB = VSB = 0
SD202
±0.1
SD201
1.0
AVGB = 20 V
SD203
1.0
VGS(th)
Gate Threshold Voltage
0.1
1.0
2.0
0.1
1.0
2.0
V
VDS = VGS, ID = 1
A, VSB = 0
rDS(ON)
Drain-Source ON Resistance
40
70
35
50
ohms
VGS = 5 V, ID = 1 mA, VSB = 0
DYNAMIC
gfs
Common-Source Forward
Transcondconductance
13
14
17
20
mS
ID = 20 mA, VDS = 15 V
f = 1 KHz, VSB = 0
ciss
Common-Source Input Capacitance
2.4
3.0
3.6
pF
ID = 20 mA
VDS = 15 V
f = 1 MHz
VSB = 0
coss
Common-Source Output Capacitance
1.0
1.2
1.0
1.2
VGS = 0
crss
Common-Source
Reverse Transfer Capacitance
0.2
0.3
0.2
0.3
Gps
Common-Source Power Gain
8.0
10
8.0
10
dB
VDS = 15 V
f = 1 GHz
ID = 20 mA
VSB = 0
NF
Noise Figure
4.5
6.0
4.0
5.0
Pi
Intercept Point
29
dBm
f = 2 MHz
ELECTRICAL CHARACTERISTICS (TA = +25
oC unless otherwise noted)
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