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參數(shù)資料
| 型號： | XP5A554 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMINI6-G1, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | XP5A554 |
1
Composite Transistors
XP5A554
Silicon NPN epitaxial planer transistor
For high speed switching
I
Features
G
For high speed switching.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Two elements incorporated into one package.
I
Basic Part Number of Element
G
2SC3757
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Unit: mm
Marking Symbol:
FO
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CES
V
EBO
I
C
I
CP
P
T
T
j
T
stg
40
V
Collector to emitter voltage
40
V
Emitter to base voltage
5
V
Collector current
100
mA
Peak collector current
300
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
V
CB
= 15V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
0.1
μ
A
μ
A
Emitter cutoff current
0.1
Forward current transfer ratio
90
200
Collector to emitter saturation voltage
0.17
0.25
V
Base to emitter saturation voltage
1.0
V
Transition frequency
450
MHz
Collector output capacitance
2
6
pF
Turn-on time
17
ns
Turn-off time
17
ns
Storage time
10
ns
1 : Base (Tr1)
2 : Emitter (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
2.1
±
0.1
0
±
0
0
0
2
±
0
0
±
0
0
1.25
±
0.1
0.425
0.425
1
2
3
6
5
4
0.2
±
0.1
0
±
0
0
0
+
–
1
6
5
Tr2
Tr1
2
3
4
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