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參數(shù)資料
| 型號： | XP4210 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | XP4210 |
1
Publication date: June 2003
SJJ00167BED
Composite Transistors
XP04210
(XP4210)
Silicon NPN epitaxial planar type
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
50
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
0.5
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
0.01
mA
Forward current transfer ratio
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
V
Input resistance
R
1
30%
47
+
30%
k
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2210 (UN2210)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: 8Z
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
50
V
Collector current
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4
Tr1
Tr2
5
6
1
3
2
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
–
6
5
4
(0.65) (0.65)
相關PDF資料 |
PDF描述 |
|---|---|
| XP04212 | Composite Device - Composite Transistors |
| XP4212 | Composite Device - Composite Transistors |
| XP04213 | Composite Device - Composite Transistors |
| XP4213 | Composite Device - Composite Transistors |
| XP04214 | Composite Device - Composite Transistors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XP4211 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XP4212 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| XP4213 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| XP4214 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XP4214-TX | 制造商:Panasonic Industrial Company 功能描述: |
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