參數(shù)資料
型號: XP161A1355PR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: POWER MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 165K
代理商: XP161A1355PR
846
11
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance
: Rds (on) = 0.05
( Vgs = 4.5V )
: Rds (on) = 0.07
( Vgs = 2.5V )
: Rds (on) = 0.15
( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage
: 1.5V
High density mounting
: SOT-89
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
N
N-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance : 0.05
(max)
N
Ultra High-Speed Switching
N
SOT-89 Package
N
Gate Protect Diode Built-in
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
20
8
4
16
4
2
V
V
A
A
A
W
Tch
150
O
C
Tstg
- 55 ~ 150
O
C
( note ) : When implemented on a ceramic PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PARAMETER
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