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參數(shù)資料
| 型號： | XP1116 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 86K |
| 代理商： | XP1116 |
1
Publication date: February 2004
SJJ00122BED
Composite Transistors
XP01110
(XP1110)
Silicon PNP epitaxial planar type
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2110 (UN2110)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: AD
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
1
2
Tr1
Tr2
3
4
5
Note) The part number in the parenthesis shows conventional part number.
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Unit: mm
2
±
0
0
+
–
0
±
0
0
1
±
0
1
3
2
0.20
±
0.05
(
1.3
±
0.1
2.0
±
0.1
5
4
(0.65) (0.65)
0
±
0
0.12
+0.05
5
10
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
50
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
0.5
0.01
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
h
FE(Small
mA
Forward current transfer ratio
160
460
h
FE
Ratio
*
0.50
0.99
/Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
+
30%
V
Input resistance
R
1
30%
47
k
Transition frequency
f
T
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
100
V
Collector-emitter voltage (Base open)
V
CEO
I
C
V
Collector current
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP01117 | Composite Device - Composite Transistors |
| XP1117 | Composite Device - Composite Transistors |
| XP01118 | Composite Device - Composite Transistors |
| XP1118 | Composite Device - Composite Transistors |
| XP0111F | Composite Device - Composite Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1117 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| XP1118 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| XP1119 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| XP111F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| XP111H | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
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