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參數(shù)資料
| 型號： | XP1003-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 放大器 |
| 英文描述： | 27000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, DIE-13 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 560K |
| 代理商： | XP1003-BD-000V |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2007 - Rev 02-Apr-07
Mimix Broadband’s two stage 27.0-35.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +34.0 dBm. The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector. This MMIC uses
Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
27.0-35.0 GHz GaAs MMIC
Power Amplifier
Absolute Maximum Ratings
Page 1 of 6
General Description
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
950 mA
+0.3 VDC
+15 dBm
-65 to +165 OC
-55 to MTTF Table
MTTF Table
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
4
Features
Chip Device Layout
4
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
15.0 dB Small Signal Gain
+34.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
dBm
VDC
mA
VDC
Min.
27.0
-
-1.0
-
Typ.
-
12.0
18.0
15.0
+/-1.0
35.0
+24.0
+34.0
+4.5
-0.7
440
0.3
Max.
35.0
-
+5.5
0.0
880
-
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k .
1,2
2
3
P1003-BD
XP1003-BD
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| XP100400S-03 | 功能描述:以太網(wǎng)模塊 XPORT-485 SAMPLE PACKAGE W/ CD RoHS:否 制造商:Lantronix 產(chǎn)品:Device Servers 數(shù)據(jù)速率:300 bps to 921.6 kbps, 10 Mbps, 100 Mbps 接口類型:Ethernet, Serial 工作電源電壓:5 V to 15 V 工作電源電流:133 mA to 400 mA 最大工作溫度:+ 70 C |
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