參數(shù)資料
型號(hào): XP04401(XP4401)
英文描述: Composite Device - Composite Transistors
中文描述: 復(fù)合設(shè)備-復(fù)合晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 103K
代理商: XP04401(XP4401)
1
Publication date: February 2004
SJJ00184BED
Composite Transistors
XP04401
(XP4401)
Silicon PNP epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SB0709A (2SB709A)
×
2
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5K
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
7
100
200
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
mA
Peak collector current
I
CP
P
T
T
j
mA
Total power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1
2
3
4
6
Tr1
Tr2
5
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
50
7
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.3
0.5
V
Transition frequency
f
T
C
ob
80
MHz
Collector output capacitance
(Common base, input open circuited)
2.7
pF
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
6
5
4
(0.65) (0.65)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
相關(guān)PDF資料
PDF描述
XP04501 Composite Device - Composite Transistors
XP4501 Composite Device - Composite Transistors
XP04506 TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | SOT-363
XP04506(XP4506) Composite Device - Composite Transistors
XP04501(XP4501) 複合デバイス - 複合トランジスタ
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參數(shù)描述
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