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參數(shù)資料
| 型號(hào)： | XN4402 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 500 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | XN4402 |
1
Publication date: February 2004
SJJ00072BED
Composite Transistors
XN04402
(XN4402)
Silicon PNP epitaxial planar type
For general amplification
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SB0710 (2SB710)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: OH
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
50
5
500
1
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
mA
Peak collector current
I
CP
P
T
T
j
A
Total power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
50
5
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
Forward current transfer ratio
*
h
FE1
85
340
h
FE2
V
CE(sat)
40
Collector-emitter saturation voltage
*
0.35
1.1
0.60
1.5
V
Base-emitter saturation voltage
*
V
BE(sat)
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
6
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
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相關(guān)代理商/技術(shù)參數(shù) |
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| XN4404 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
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| XN4502 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| XN4503 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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