參數(shù)資料
型號： XN4316
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： Silicon NPN(PNP) epitaxial planer transistor
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 113K
代理商： XN4316
XN04316
2
SJJ00065BED
Tr2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
160
40
120
80
0
500
200
400
100
300
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base cutoff current (Collector open)
I
EBO
0.01
mA
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
R
1
0.2
V
Input resistance
30%
4.7
+
30%
k
Transition frequency
f
T
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
50
50
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
I
EBO
0.1
0.5
0.01
μ
A
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
mA
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
V
OH
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
V
OL
0.2
+
30%
V
Input resistance
R
1
f
T
30%
4.7
k
Transition frequency
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
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相關代理商/技術參數(shù)
參數(shù)描述
XN431L 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN(PNP) epitaxial planer transistor
XN4322 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
XN4381 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits
XN4401 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
XN4402 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
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