參數(shù)資料
型號： XN1D873
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： Silicon N-channel junction FET
中文描述： 30 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝： MINI5-G1, SC-74A, 5 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 29K
代理商： XN1D873
1
Composite Transistors
XN1D873
Silicon N-channel junction FET
For analog switching
I
Features
G
Two elements incorporated into one package.
(Drain-coupled FETs)
G
Reduction of the mounting area and assembly cost by one half.
G
Low-frequency and low-noise J-FET.
I
Basic Part Number of Element
G
2SK1103
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Gate (Tr1)
2 : Gate (Tr2)
3 : Source (Tr2)
4 : Drain
5 : Source (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
OC
Internal Connection
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
Parameter
Symbol
Ratings
Unit
Gate to drain voltage
V
GDS
I
D
I
G
P
T
T
ch
T
stg
–50
V
Drain current
30
mA
Gate current
10
mA
Total power dissipation
300
mW
Channel temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
5
FET 2
FET 1
4
3
2
1
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain current
V
GDS
I
DSS
I
GSS
V
GSC
gm
I
G
= –10
μ
A, V
DS
= 0
V
DS
= 10V, V
GS
= 0
V
GS
= –30V, V
DS
= 0
V
DS
= 10V, I
D
= 10
μ
A
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
–50
V
Drain current
0.2
6.0
mA
Gate cutoff current
–10
nA
Gate to source cutoff voltage
–1.5
–3.5
V
Mutual conductance
1.8
2.5
mS
Drain ON resistance
R
DS(on)
C
iss
C
rss
C
oss
300
Common source short-circuit input capacitance
7
pF
Common source reverse transfer capacitance
1.5
pF
Common source short-circuit output capacitance
1.5
pF
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