參數(shù)資料
型號(hào)： XN1D873
英文描述： Composite Device - Composite Transistors
中文描述： 復(fù)合設(shè)備-復(fù)合晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 78K
代理商： XN1D873
1
Publication date: December 2002
SJJ00119CED
Composite Transistors
XN0D873
(XN1D873)
Silicon N-channel junction FET
For analog switching
■
Features
Two elements incorporated into one package (Drain-coupled FETs)
Reduction of the mounting area and assembly cost by one half
Low-frequency and low-noise J-FET
■
Basic Part Number
2SK1103
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
V
GDS
I
G
=
10
μ
A, V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
=
30 V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
μ
A
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
50
V
Drain-source cutoff current
I
DSS
I
GSS
0.2
6.0
mA
Gate-source cutoff current
10
3.5
nA
Gate-source cutoff voltage
V
GSC
1.5
V
Drain-source ON resistance
R
DS(on)
gm
300
Mutual conductance
1.8
2.5
mS
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output
capacitance (Common-source)
Reverse transfer capacitance
(Common-source)
C
iss
7
pF
C
oss
1.5
pF
C
rss
1.5
pF
Marking Symbol: OC
Parameter
Symbol
Rating
Unit
Gate-drain surrender voltage
V
GDS
I
D
50
V
Drain current
30
mA
Gate current
I
G
10
mA
Total power dissipation
P
T
T
ch
300
mW
Channel temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
1: Gate (FET1)
2: Gate (FET2)
3: Source (FET2)
EIAJ: SC-74A
4: Drain
5: Source (FET1)
Mini5-G1 Package
2.90
1.9
±
0.1
0.95
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.95
0.30
+0.10
5
4
3
1
2
+0.20
5
10
1
5
FET2
FET1
2
3
4
Note) The part number in the parenthesis shows conventional part number.
Note)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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