參數(shù)資料
型號(hào)： XN1401
廠商： PANASONIC CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Silicon PNP epitaxial planer transistor
中文描述： 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： MINI PACKAGE-5
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 42K
代理商： XN1401
1
Composite Transistors
XN1401
Silicon PNP epitaxial planer transistor
For general amplification
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SB709A
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
5V
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector current
–100
mA
Peak collector current
–200
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector cutoff current
– 0.1
μ
A
μ
A
–100
Forward current transfer ratio
160
460
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
0.5
0.99
Collector to emitter saturation voltage
– 0.3
– 0.5
V
Transition frequency
80
MHz
Collector output capacitance
2.7
pF
*1
Ratio between 2 elements
5
4
3
1
2
Tr2
Tr1
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