- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371345 > XN06216(XN6216) 複合デバイス － 複合トランジスタ PDF資料下載
參數(shù)資料
| 型號： | XN06216(XN6216) |
| 英文描述： | 複合デバイス － 複合トランジスタ |
| 中文描述： | 複合デバイス-複合トランジスタ |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 82K |
| 代理商： | XN06216(XN6216) |
1
Publication date: July 2003
SJJ00100BED
Composite Transistors
XN06211
(XN6211)
Silicon NPN epitaxial planar transistor
For switching/digital circuits
■
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
UNR2211 (UN2211)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: 7Z
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
50
V
Collector current
100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
2.90
1.9
±
0.1
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
50
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
0.5
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
h
FE(Small
0.5
mA
Forward current transfer ratio
h
FE
Ratio
*
35
0.50
0.99
/Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
0.25
V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
V
Input resistance
R
1
30%
10
+
30%
k
Resistance ratio
R
1
/ R
2
f
T
0.8
1.0
1.2
Transition frequency
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
150
MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP01110 | Composite Device - Composite Transistors |
| XP1110 | Composite Device - Composite Transistors |
| XP01115 | Composite Device - Composite Transistors |
| XP1115 | Composite Device - Composite Transistors |
| XP01116 | Composite Device - Composite Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN06401 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| XN06401(XN6401) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors |
| XN0640100L | 功能描述:TRANS ARRAY PNP/PNP MINI-6P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| XN06435 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| XN06435(XN6435) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:XN06435 (XN6435) - Composite Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。