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參數(shù)資料
| 型號： | XN04407 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | XN04407 |
1
Publication date: December 2003
SJJ00073BED
Composite Transistors
XN04404
(XN4404)
Silicon PNP epitaxial planar type
For general amplification
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SB0970 (2SB970)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Internal Connection
Marking Symbol: CV
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ: SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
0.1
0.95
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.30
+0.10
0.50
+0.10
0.95
6
5
4
1
3
2
+0.20
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
10
7
0.5
1
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Total power dissipation
P
T
T
j
T
stg
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1 A
I
C
=
400 mA, I
B
=
8 mA
I
C
=
400 mA, I
B
=
8 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
15
10
7
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
Forward current transfer ratio
*
h
FE1
100
350
h
FE2
V
CE(sat)
60
Collector-emitter saturation voltage
0.16
0.8
0.30
1.2
V
Base-emitter saturation voltage
V
BE(sat)
V
Transition frequency
f
T
C
ob
130
MHz
Collector output capacitance
(Common base, input open circuited)
22
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
相關PDF資料 |
PDF描述 |
|---|---|
| XN04482(XN4482) | 複合デバイス － 複合トランジスタ |
| XN04404(XN4404) | 複合デバイス － 複合トランジスタ |
| XN05601(XN5601) | 複合デバイス － 複合トランジスタ |
| XN06435 | TRANSISTOR | BJT | PAIR | PNP | 20V V(BR)CEO | 30MA I(C) | SC-74 |
| XN06435(XN6435) | XN06435 (XN6435) - Composite Transistors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XN04482 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 100MA I(C) | SC-74 |
| XN04482(XN4482) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
| XN04501 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| XN04501(XN4501) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 複合トランジスタ |
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