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參數(shù)資料
| 型號(hào)： | XM28C040MHR |
| 英文描述： | 5 Volt, Byte Alterable E2PROM |
| 中文描述： | 5伏，可變E2PROM的字節(jié) |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | XM28C040MHR |
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XM28C040
1
5 Volt, Byte Alterable E
2
PROM
Xicor, Inc. 1991-1997 Patents Pending
3873-1.7 6/13/97 T1/C0/D0 SH
Characteristics subject to change without notice
TYPICAL FEATURES
High Density 4 Megabit (512K x 8) Module
Access Time of 200ns at –55
°
C to +125
°
C
Base Memory Component: Xicor X28C010
Pinout Conforms to JEDEC Standard for
4 Megabit E
2
PROM
Fast Write Cycle Times
—256 Byte Page Write
Early End of Write Detection
—
DATA
Polling
—Toggle Bit Polling
Software Data Protection
Three Temperature Ranges
—Commercial: 0
°
C to +75
°
C
—Industrial: –40
°
to +85
°
C
—Military: –55
°
to +125
°
C
High Rel Modules all Components are
MIL-STD-883 Compliant
Endurance: 100,000 Cycles
DESCRIPTION
The XM28C040 is a high density 4 Megabit E
2
PROM
comprised of four X28C010's mounted on a co-fired
multilayered ceramic substrate. Individual components
are 100% tested prior to assembly in module form and
then 100% tested after assembly.
The XM28C040 is configured 512K x 8 bit. The module
supports a 256-byte page write operation. This com-
bined with
DATA
Polling or Toggle Bit Polling, effectively
provides a 39
μ
s/byte write cycle, enabling the entire
array to be rewritten in 10 seconds.
The XM28C040 provides the same high endurance and
data retention as the X28C010.
4 Megabit Module
XM28C040
512K x 8 Bit
3873 FHD F01
WE
CE
OE
A18
A17
I/O0–I/O7
A0–A16
X28C010
A0–A16
I/O0–I/O7
CE
WE
OE
OE
WE
X28C010
A0–A16
I/O0–I/O7
CE
X28C010
A0–A16
I/O0–I/O7
CE
WE
OE
X28C010
A0–A16
I/O0–I/O7
CE
WE
OE
FUNCTIONAL DIAGRAM
PIN CONFIGURATION
3873 FHD F02
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
XM28C040
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XM28C040I-20 | 5 Volt, Byte Alterable E2PROM |
| XM28C040 | 5 Volt, Byte Alterable EEPROM(高密度，字節(jié)可改變的EEPROM) |
| XM28C080SI-25 | x8 EEPROM Module |
| XM28C4096-15 | x16 EEPROM |
| XM28C4096-20 | x16 EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XM28C040MHR-20 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:5 Volt, Byte Alterable E2PROM |
| XM28C040MHR-25 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:5 Volt, Byte Alterable E2PROM |
| XM28C040P | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C040P-15 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C040P-20 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
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