參數(shù)資料
型號(hào): XDPAD10
英文描述: ARRAY OF INDEPENDENT DIODES|CHIP
中文描述: 獨(dú)立二極管陣列|芯片
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 26K
代理商: XDPAD10
DPAD1/DPAD2/DPAD5/DPAD10/DPAD20/DPAD50 /DPAD100
SSTDPAD5/SSTDPAD10/SSTDPAD20/SSTDPAD50/SSTDPAD100
C ORPORATION
ABSOLUTE MAXIMUM RATINGS (25
o
C)
Forward Gate Current, Each Side. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total Device Dissipation @ T
A
= 25
o
C
Derate 4.0 mW/
o
C to 125
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125
o
C
Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
o
C
ELECTRICAL CHARACTERISTICS
(25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN
TYP
MAX
UNIT
TEST CONDITIONS
STATIC
I
R
Reverse Current
-1
pA
VR = -20 V
DPAD1
-2
DPAD2
-5
DPAD5
-10
DPAD10
-20
DPAD20
-50
DPAD50
-100
DPAD100
BV
R
Breakdown Voltage (Reverse)
-45
-120
V
I
R
= -1
μ
A
DPAD1, 2, 5
-35
DPAD10, 20, 50, 100
V
F
Forward Voltage Drop
0.8
1.5
I
F
= 5 mA
DPAD1, 2, 5, 10, 20, 50, 100
DYNAMIC
C
R
Capacitance
0.8
pF
V
R
= -5 V, f = 1 MHz
DPAD1, 2, 5
2.0
DPAD10, 20, 50, 100
| CR1 - CR2 |
Differential Capacitance
0.1
0.2
pF
V
R1
= V
R2
= -5 V, f = 1 MHz
DPAD1, 2, 5, 10, 20, 50, 100
APPLICATION
Operational Amplifier Protection. Input Differential Voltage
limited to 0.8 V (typ) by DPADS D
1
and D
2
Common mode
input voltage limited by DPADS D
3
and D
4
to
±
15V.
Typical sample and hold circuit with clipping, DPAD diodes
reduce offset voltages fed capacitively from the FET switch
gate.
DPAD10
D
1
D
4
+
1
-15V
+15V
_
D
2
D
3
I < 1 pA
+V
-V
DPAD1
V
OUT
C
CONTROL SIGNAL
e
in
+
DPAD1
J110
J210
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