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參數(shù)資料
| 型號(hào)： | XD1005-QT-0G00 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
| 中文描述： | 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, SMD, QFN-16 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 206K |
| 代理商： | XD1005-QT-0G00 |
Page 4 of 5
App Note [1] Biasing –
As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias.
Bias is nominally Vd=5V, Id=170 mA.
App Note [2] Bias Arrangement -
Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier, QFN
D1005-QT
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
Channel
Temperature
Rth
MTTF Hours
FITs
55 deg Celsius
Deg Celsius
C/W
E+
E+
75 deg Celsius
Deg Celsius
C/W
E+
E+
95 deg Celsius
Deg Celsius
C/W
E+
E+
Bias Conditions:
Vd=5.0V, Id=170 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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