參數(shù)資料
型號: XCS20-5VQ144C
廠商: Xilinx, Inc.
英文描述: Spartan and Spartan-XL Families Field Programmable Gate Arrays
中文描述: 斯巴達(dá)和Spartan - xL的家庭現(xiàn)場可編程門陣列
文件頁數(shù): 53/82頁
文件大小: 863K
代理商: XCS20-5VQ144C
Spartan and Spartan-XL Families Field Programmable Gate Arrays
DS060 (v1.6) September 19, 2001
Product Specification
1-800-255-7778
R
Spartan-XL CLB RAM Synchronous (Edge-Triggered) Write Operation Guidelines (cont.)
Testing of switching parameters is modeled after testing
methods specified by MIL-M-38510/605. All devices are
100% functionally tested. Internal timing parameters are
derived from measuring internal test patterns. Listed below
are representative values. For more specific, more precise,
by the static timing analyzer (TRCE in the Xilinx Develop-
ment System) and back-annotated to the simulation netlist.
All timing parameters assume worst-case operating condi-
tions (supply voltage and junction temperature). Values
apply to all Spartan-XL devices and are expressed in nano-
seconds unless otherwise noted.
Spartan-XL CLB RAM Synchronous (Edge-Triggered) Write Timing
Symbol
Dual Port RAM
Size
-5
-4
Units
Min
Max
Min
Max
Write Operation(1)
TWCDS
Address write cycle time (clock K period)
16x1
7.7
-
8.4
-
ns
TWPDS
Clock K pulse width (active edge)
16x1
3.1
-
3.6
-
ns
TASDS
Address setup time before clock K
16x1
1.3
-
1.5
-
ns
TDSDS
DIN setup time before clock K
16x1
1.7
-
2.0
-
ns
TWSDS
WE setup time before clock K
16x1
1.4
-
1.6
-
ns
All hold times after clock K
16x1
0
-
0
-
ns
TWODS
Data valid after clock K
16x1
-
5.2
-
6.1
ns
Notes:
1.
Read Operation timing for 16 x 1 dual-port RAM option is identical to 16 x 2 single-port RAM timing
Single Port
Dual Port
WCLK (K)
WE
ADDRESS
DATA IN
DATA OUT
OLD
NEW
TDSS
TDHS
TASS
TAHS
TWSS
TWPS
TWHS
TWSDS
TWHDS
TWOS
TILO
DS060_34_011300
WCLK (K)
WE
ADDRESS
DATA IN
DATA OUT
OLD
NEW
TDSDS
TDHDS
TASDS
TAHDS
TWPDS
TWODS
TILO
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