• 參數(shù)資料
    型號: XCS20-5BG84I
    廠商: Xilinx, Inc.
    英文描述: Spartan and Spartan-XL Families Field Programmable Gate Arrays
    中文描述: 斯巴達(dá)和Spartan - xL的家庭現(xiàn)場可編程門陣列
    文件頁數(shù): 40/82頁
    文件大?。?/td> 863K
    代理商: XCS20-5BG84I
    Spartan and Spartan-XL Families Field Programmable Gate Arrays
    DS060 (v1.6) September 19, 2001
    Product Specification
    1-800-255-7778
    R
    Spartan CLB RAM Synchronous (Edge-Triggered) Write Operation Guidelines
    Testing of switching parameters is modeled after testing
    methods specified by MIL-M-38510/605. All devices are
    100% functionally tested. Internal timing parameters are
    derived from measuring internal test patterns. Listed below
    are representative values. For more specific, more precise,
    and worst-case guaranteed data, use the values reported
    by the static timing analyzer (TRCE in the Xilinx Develop-
    ment System) and back-annotated to the simulation netlist.
    All timing parameters assume worst-case operating condi-
    tions (supply voltage and junction temperature). Values
    apply to all Spartan devices and are expressed in nanosec-
    onds unless otherwise noted.
    Symbol
    Single Port RAM
    Size(1)
    Speed Grade
    Units
    -4
    -3
    Min
    Max
    Min
    Max
    Write Operation
    TWCS
    Address write cycle time (clock K period)
    16x2
    8.0
    -
    11.6
    -
    ns
    TWCTS
    32x1
    8.0
    -
    11.6
    -
    ns
    TWPS
    Clock K pulse width (active edge)
    16x2
    4.0
    -
    5.8
    -
    ns
    TWPTS
    32x1
    4.0
    -
    5.8
    -
    ns
    TASS
    Address setup time before clock K
    16x2
    1.5
    -
    2.0
    -
    ns
    TASTS
    32x1
    1.5
    -
    2.0
    -
    ns
    TAHS
    Address hold time after clock K
    16x2
    0.0
    -
    0.0
    -
    ns
    TAHTS
    32x1
    0.0
    -
    0.0
    -
    ns
    TDSS
    DIN setup time before clock K
    16x2
    1.5
    -
    2.7
    -
    ns
    TDSTS
    32x1
    1.5
    -
    1.7
    -
    ns
    TDHS
    DIN hold time after clock K
    16x2
    0.0
    -
    0.0
    -
    ns
    TDHTS
    32x1
    0.0
    -
    0.0
    -
    ns
    TWSS
    WE setup time before clock K
    16x2
    1.5
    -
    1.6
    -
    ns
    TWSTS
    32x1
    1.5
    -
    1.6
    -
    ns
    TWHS
    WE hold time after clock K
    16x2
    0.0
    -
    0.0
    -
    ns
    TWHTS
    32x1
    0.0
    -
    0.0
    -
    ns
    TWOS
    Data valid after clock K
    16x2
    -
    6.5
    -
    7.9
    ns
    TWOTS
    32x1
    -
    7.0
    -
    9.3
    ns
    Read Operation
    TRC
    Address read cycle time
    16x2
    2.6
    -
    2.6
    -
    ns
    TRCT
    32x1
    3.8
    -
    3.8
    -
    ns
    TILO
    Data valid after address change (no Write
    Enable)
    16x2
    -
    1.2
    -
    1.6
    ns
    TIHO
    32x1
    -
    2.0
    -
    2.7
    ns
    TICK
    Address setup time before clock K
    16x2
    1.8
    -
    2.4
    -
    ns
    TIHCK
    32x1
    2.9
    -
    3.9
    -
    ns
    Notes:
    1.
    Timing for 16 x 1 RAM option is identical to 16 x 2 RAM timing.
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