參數(shù)資料
型號: XC910607
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: PWM Control, PWM/PFM Switching Control, Step-up DC/DC Converters
中文描述: PWM控制,PWM / PFM切換控制,升壓DC / DC轉(zhuǎn)換器
文件頁數(shù): 4/7頁
文件大?。?/td> 81K
代理商: XC910607
Preliminary
Electrical Characteristics
XC9106D003MR, XC9107D003MR
PARAMETER
Output Voltage
Reference Voltage Range
FB Control Voltage
Power Supply Voltage Range
Operation Start Voltage
(FOSC=300 (kHz)
Ta=25
O
C
Circuit
*1
*1
Test Conditions: Unless otherwise stated, CL: ceramic, recommended MOS FET should be connected.
V
DD
=
(V)
D
Vref =
V
IN
=
(V)
D
I
OUT
=
3.30
50
(V) ,
(mA)
RFB1, 2 x 10
Notes
*1
Although the IC starts step-up operations from a V
DD
of 0.8V, the output voltage and oscillation frequency are stabilized at
V
DD
1.8V or (Vref applied voltage + 0.7V). Therefore, a V
DD
of more than 1.8V or (Vref applied voltage + 0.7V) is recommended when
V
DD
is supplied from V
IN
or other power sources.
Standard Circuit
4
Externally Applied Reference Voltage (Vref)
SYMBOL
V
OUT
Vref
V
FB
V
DD
V
ST1
XC9106 / 07 Series
PWM Control, PWM/PFM Switching Control,
Step-up DC/DC Converters
CONDITIONS
MIN.
8.820
0.8
0.882
1.8
TYP.
9.000
MAX.
9.180
2.5
0.918
10.0
0.9
UNITS
V
V
V
V
V
Vref = 0.9V
1
-
4
-
3
Vref = 0.9V
VDD as shown right or
(Vref applied voltage + 0.7V)
Recommended Circuit using 2SD1628, I
OUT
=1.0mA
No external connections
CE/Vref=0.9V, Voltage applied, FB=0V
Recommended Circuit using 2SD1628, IOUT=1.0mA
Same as V
ST2
, V
DD
=3.300V
Same as I
DD1
, FB=1.2V
Same as I
DD1
, CE/Vref=0V
Same as I
DD1
MAXDTY Same as I
DD1
PFMDTY No Load (XC9106 series)
EFFI
Recommended Circuit using XP161A1355
T
SS
Vref=0.9V
V
CEH
Same as I
DD1
V
CEL
Same as I
DD1
R
EXTH
Same as I
DD1
, V
EXT
=V
OUT
-0.4V
R
EXTL
Same as I
DD1
, V
EXT
=0.4V
I
CEH
Same as I
DD2
, CE=2.5V
I
CEL
Same as I
DD2
, CE=0V
I
FBH
Same as I
DD2
, CE=V
DD
I
FBL
Same as I
DD2
, CE=0V
0.900
Oscillation Start Voltage
V
ST2
0.8
V
4
Operation Holding Voltage
Supply Current 1
Supply Current 2
Stand-by Current
Oscillation Frequency
Maximum Duty Ratio
PFM Duty Ratio
Efficiency
Soft-start Time
CE "High" Voltage
CE "Low" Voltage
EXT "High" ON Resistance
EXT "Low" ON Resistance
CE "High" Current
CE "Low" Current
FB "High" Current
FB "Low" Current
V
HLD
I
DD1
I
DD2
I
STB
FOSC
0.7
88
22
1.0
345
87
40
V
μ
A
μ
A
μ
A
KHz
%
%
%
mS
V
V
μ
A
μ
A
μ
A
μ
A
3
4
4
5
4
4
1
1
1
5
5
4
4
5
5
5
5
62
16
255
75
24
300
81
32
85
10.0
5.0
0.65
20.0
0.20
36
24
2.5
-0.1
0.1
-0.1
24
16
0.0
3.30
0.09
When obtaining V
DD
from a source other than V
OUT
, please
insert a capacitor C
DD
between the V
DD
pin and the GND pin in
order to provide stabler operations.
Please wire CL & C
IN
between the V
OUT
/V
DD
pin and the GND
pin. Strengthen the wiring sufficiently. When using a capacitor
other than ceramic or low ESR at CL, please take away
R
SENSE
and short.
Insert Rb and CB when using a
bipolar NPN Transistor.
V
OUT
Nch Power
MOS FET
RSENSE
L
V
IN
SD
R
FB1
R
FB2
C
FB
CE/Vref
1
5
4
3
2
CL
Rb
Cb
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