參數(shù)資料
型號(hào): XC6SLX150T-3FG900I
廠商: Xilinx Inc
文件頁數(shù): 34/89頁
文件大?。?/td> 0K
描述: IC FPGA SPARTAN 6 900FGGBGA
標(biāo)準(zhǔn)包裝: 27
系列: Spartan® 6 LXT
LAB/CLB數(shù): 11519
邏輯元件/單元數(shù): 147443
RAM 位總計(jì): 4939776
輸入/輸出數(shù): 540
電源電壓: 1.14 V ~ 1.26 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 100°C
封裝/外殼: 900-BBGA
供應(yīng)商設(shè)備封裝: 900-FBGA
Spartan-6 FPGA Data Sheet: DC and Switching Characteristics
DS162 (v3.0) October 17, 2011
Product Specification
4
Table 3: eFUSE Programming Conditions(1)
Symbol
Description
Min
Typ
Max
Units
External voltage supply
3.2
3.3
3.4
V
IFS
VFS supply current
––
40
mA
VCCAUX Auxiliary supply voltage relative to GND
3.2
3.3
3.45
V
RFUSE(3) External resistor from RFUSE pin to GND
1129
1140
1151
VCCINT
Internal supply voltage relative to GND
1.14
1.2
1.26
V
tj
Temperature range
15–85
°C
Notes:
1.
These specifications apply during programming of the eFUSE AES key. Programming is only supported through JTAG.The AES key is only
supported in the following devices: LX75, LX75T, LX100, LX100T, LX150, and LX150T.
2.
When programming eFUSE, VFS must be less than or equal to VCCAUX. When not programming or when eFUSE is not used, Xilinx
recommends connecting VFS to GND. However, VFS can be between GND and 3.45 V.
3.
An RFUSE resistor is required when programming the eFUSE AES key. When not programming or when eFUSE is not used, Xilinx
recommends connecting the RFUSE pin to VCCAUX or GND. However, RFUSE can be unconnected.
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