參數(shù)資料
型號(hào)： XC61FC1612LL
廠商： TOREX SEMICONDUCTOR LTD.
英文描述： Voltage Detectors, Delay Circuit Built-In
中文描述： 電壓檢測(cè)器，延遲電路內(nèi)置
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 751K
代理商： XC61FC1612LL
3/12
XC61F
Series
■
ELECTRICAL CHARACTERISTICS
PARAMETER
Input Voltage
SYMBOL
V
IN
RATINGS
12.0
UNITS
V
Output Current
I
OUT
50
mA
CMOS
V
SS
-0.3 ~ V
IN
+ 0.3
V
SS
-0.3 ~ 9
150
500
300
-30
～
+85
-40
～
+125
Output Voltage
N-ch open drain
SOT-23
SOT-89
TO-92
V
OUT
V
Power Dissipation
Pd
mW
Operating Temperature Range
Storage Temperature Range
Topr
Tstg
℃
℃
PARAMETER
SYMBOL
CONDITIONS
MIN.
V
DF(T)
x 0.98
V
DF
x 0.02
-
-
-
-
-
0.7
-
-
-
-
-
-
TYP.
V
DF(T)
V
DF
x 0.05
0.9
1.0
1.3
1.6
2.0
-
2.2
7.7
10.1
11.5
13.0
-10.0
MAX.
V
DF(T)
x 1.02
V
DF
x 0.08
2.6
3.0
3.4
3.8
4.2
10.0
-
-
-
-
-
-
UNITS
Detect Voltage
V
DF
V
Hysteresis Range
V
HYS
V
V
IN
= 1.5V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
Supply Current
I
SS
μ
A
Operating Voltage
V
IN
V
DF
= 1.6V to 6.0V
V
V
IN
= 1.0V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
V
IN
= 8.0V
N-ch V
DF
=0.5V
CMOS, P-ch V
DF
=2.1V
Output Current
I
OUT
mA
Detect Voltage
Temperature
Characteristics
Transient Delay Time
(V
DR
→
V
OUT
inversion)
Δ
V
DF
Δ
Topr
V
DF
-
±
100
-
ppm/
℃
T
DLY
＊
V
IN
changes from 0.6V to 10V
50
-
200
ms
■
BLOCK DIAGRAMS
(1) CMOS output
(2) N-channel open drain output
■
ABSOLUTE MAXIMUM RATINGS
Ta = 25
℃
Ta=25
℃
V
DF
(T): Setting detect voltage value
Release Voltage: V
DR
= V
DF
+ V
HYS
* Transient Delay Time: 1ms to 50ms & 80ms to 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2
μ
A greater than it is after that period
(completion of release operation) because of delay circuit through current.
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