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參數(shù)資料
| 型號： | XB1009-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| 中文描述： | 14.0-30.0 GHz的砷化鎵單片緩沖放大器 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 283K |
| 代理商： | XB1009-BD |
14.0-30.0 GHz GaAs MMIC
Buffer Amplifier
Excellent Transmit LO/Output Buffer Stage
On-Chip ESD Protection
18.0 dB Small Signal Gain
+22.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110, 340 mA
+0.3 VDC
+12.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
Page 1 of 7
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd=5.0V, Vg=-0.6V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.6V Typical)
(2) Measured using constant current.
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
Min.
14.0
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
7.0
8.0
18.0
+/-4.0
40.0
+22.0
+5.0
-0.6
80
240
Max.
30.0
-
-
-
-
-
-
+5.5
0.0
95
290
2
B1009-BD
Mimix Broadband’s three stage 14.0-30.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +22.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
General Description
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2007 - Rev 05-Feb-07
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XB1009-BD-000V | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-BD-EV1 | 14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-QT | 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1009-QT-0G00 | 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1009-QT-EV1 | 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XB1009-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:14.0-30.0 GHz GaAs MMIC Buffer Amplifier |
| XB1009-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1009-QT-0G00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1009-QT-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN |
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