參數(shù)資料
型號(hào)： XB1006
廠商： MIMIX BROADBAND INC
元件分類： 衰減器
英文描述： 18.0-38.0 GHz GaAs MMIC Buffer Amplifier
中文描述： 18000 MHz - 38000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： DIE-6
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 903K
代理商： XB1006
18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
Page 1 of 14
Features
High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband
’
s three stage 18.0-38.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
with a positive gain slope, and a noise figure of 3.2 dB
across the band. This MMIC uses Mimix Broadband
’
s
0.15
μ
m GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
18.0
4.0
7.0
19.0
-
40.0
-
-
-
+14.0
-
-1.2
-
Typ.
-
14.0
12.0
21.0
+/-2.0
50.0
3.2
+15.0
+25.0
+18.0
+3.5
-0.3
50
Max.
38.0
-
-
27.0
-
-
4.5
-
-
-
+5.5
+0.1
100
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
120 mA
+0.3 VDC
+5 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA.
(4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
5
1,2,3
1,2,3
5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.5V, Vg=-0.3V Typical)
April 2005 - Rev 01-Apr-05
B1006
3
3
3
3
4
1,2,3
相關(guān)PDF資料
PDF描述
XB1007-BD 4.0-11.0 GHz GaAs MMIC Buffer Amplifier
XB1007-BD-000V 4.0-11.0 GHz GaAs MMIC Buffer Amplifier
XB1007-BD-EV1 4.0-11.0 GHz GaAs MMIC Buffer Amplifier
XB1008-BD 10.0-21.0 GHz GaAs MMIC Buffer Amplifier
XB1008-BD-000V 10.0-21.0 GHz GaAs MMIC Buffer Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XB1006-BD 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier
XB1006-BD-000V 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier
XB1006-BD-000W 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier
XB1006-BD-EV1 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-38.0 GHz GaAs MMIC Buffer Amplifier
XB1007-BD 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier
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