參數(shù)資料
型號(hào)： XAM1214-130
廠商： 意法半導(dǎo)體
英文描述： RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
中文描述： RF功率晶體管L波段雷達(dá)應(yīng)用
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 33K
代理商： XAM1214-130
1/4
TARGET DATA
July 2000
AM1214-130
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY /GOLD METALLIZATION
EMITTER SITE BALLASTING
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT
= 130 W MIN. WITH 8.0 dB GAIN
1215-1400 MHz OPERATION
DESCRIPTION
The AM1214-130 is a rugged, Class C common
base device designed as driver of AM1214-250 for
new L - Band medium & long pulse radar applica-
tions.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
PIN CONNECTION
1
3
4
2
1. Collector
2. Base
3. Emitter
4. Base
M259
hermetically sealed
ORDER CODE
AM1214-130
BRANDING
XAM1214-130
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
P
DISS
Power Dissipation (T
C
≤
85
°
C)*
I
C
Device Current*
V
CBO
Collector-Base Voltage
T
j
Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
TBD
W
12
A
70
V
+250
°
C
-65 to +200
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance*
TBD
°
C/W
* Applies only to rated RF amplifier operation: 150 microsec / 10%
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