參數(shù)資料
型號: XA3S250E-4FT256I
廠商: Xilinx Inc
文件頁數(shù): 35/37頁
文件大小: 0K
描述: IC FPGA SPARTAN-3E 256FPBGA
標準包裝: 90
系列: Spartan®-3E XA
LAB/CLB數(shù): 612
邏輯元件/單元數(shù): 5508
RAM 位總計: 221184
輸入/輸出數(shù): 172
門數(shù): 250000
電源電壓: 1.14 V ~ 1.26 V
安裝類型: 表面貼裝
工作溫度: -40°C ~ 100°C
封裝/外殼: 256-LBGA
供應商設備封裝: 256-FTBGA
DS635 (v2.0) September 9, 2009
Product Specification
7
R
Power Supply Specifications
Table 3: Supply Voltage Thresholds for Power-On Reset
Symbol
Description
Min
Max
Units
VCCINTT
Threshold for the VCCINT supply
0.4
1.0
V
VCCAUXT
Threshold for the VCCAUX supply
0.8
2.0
V
VCCO2T
Threshold for the VCCO Bank 2 supply
0.4
1.0
V
Notes:
1.
VCCINT, VCCAUX, and VCCO supplies to the FPGA can be applied in any order. However, the FPGA’s configuration source (SPI Flash, parallel
NOR Flash, microcontroller) might have specific requirements. Check the data sheet for the attached configuration source.
2.
To ensure successful power-on, VCCINT, VCCO Bank 2, and VCCAUX supplies must rise through their respective threshold-voltage ranges with
no dips at any point.
Table 4: Supply Voltage Ramp Rate
Symbol
Description
Min
Max
Units
VCCINTR
Ramp rate from GND to valid VCCINT supply level
0.2
50
ms
VCCAUXR
Ramp rate from GND to valid VCCAUX supply level
0.2
50
ms
VCCO2R
Ramp rate from GND to valid VCCO Bank 2 supply level
0.2
50
ms
Notes:
1.
VCCINT, VCCAUX, and VCCO supplies to the FPGA can be applied in any order. However, the FPGA’s configuration source (SPI Flash, parallel
NOR Flash, microcontroller) might have specific requirements. Check the data sheet for the attached configuration source.
2.
To ensure successful power-on, VCCINT, VCCO Bank 2, and VCCAUX supplies must rise through their respective threshold-voltage ranges with
no dips at any point.
Table 5: Supply Voltage Levels Necessary for Preserving RAM Contents
Symbol
Description
Min
Units
VDRINT
VCCINT level required to retain RAM data
1.0
V
VDRAUX
VCCAUX level required to retain RAM data
2.0
V
Notes:
1.
RAM contents include configuration data.
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