參數(shù)資料
型號: X9250TS24IT1
廠商: Intersil
文件頁數(shù): 4/20頁
文件大?。?/td> 0K
描述: IC XDCP QUAD 256-TAP 100K 24SOIC
標準包裝: 1,000
系列: XDCP™
接片: 256
電阻(歐姆): 100k
電路數(shù): 4
溫度系數(shù): 標準值 ±300 ppm/°C
存儲器類型: 非易失
接口: 6 線 SPI(芯片選擇,設(shè)備位址)
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 24-SOIC
包裝: 帶卷 (TR)
12
FN8165.3
August 29, 2006
D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.)
ENDURANCE AND DATA RETENTION
CAPACITANCE
POWER-UP TIMING
POWER UP AND DOWN REQUIREMENT
The are no restrictions on the sequencing of the bias supplies VCC, V+, and V- provided that all three supplies reach
their final values within 1msec of each other. At all times, the voltages on the potentiometer pins must be less than V+
and more than V-. The recall of the wiper position from nonvolatile memory is not in effect until all supplies reach their
final value. The VCC ramp rate spec is always in effect.
Notes: (5) This parameter is periodically sampled and not 100% tested
(6) tPUR and tPUW are the delays required from the time the third (last) power supply (VCC, V+ or V-) is stable until the specific instruction can be
issued. These parameters are periodically sampled and not 100% tested.
(7) Sample tested only.
A.C. TEST CONDITIONS
Symbol
Parameter
Limits
Test Conditions
Min.
Typ.
Max.
Unit
ICC1
VCC supply current
(active)
400
A
fSCK = 2MHz, SO = Open,
Other Inputs = VSS
ICC2
VCC supply current
(nonvolatile write)
1mA
fSCK = 2MHz, SO = Open,
Other Inputs = VSS
ISB
VCC current (standby)
5
A
SCK = SI = VSS, Addr. = VSS
ILI
Input leakage current
10
A
VIN = VSS to VCC
ILO
Output leakage current
10
A
VOUT = VSS to VCC
VIH
Input HIGH voltage
VCC x 0.7
VCC + 0.1
V
VIL
Input LOW voltage
-0.5
VCC x 0.3
V
VOL
Output LOW voltage
0.4
V
IOL = 3mA
Parameter
Min.
Unit
Minimum endurance
100,000
Data changes per bit per register
Data retention
100
Years
Symbol
Test
Max.
Unit
Test Conditions
COUT(5)
Output capacitance (SO)
8
pF
VOUT = 0V
CIN(5)
Input capacitance (A0, A1, SI, and SCK, CS)
6
pF
VIN = 0V
Symbol
Parameter
Min.
Max.
Unit
tPUR(6)
Power-up to initiation of read operation
1
ms
tPUW(6)
Power-up to initiation of write operation
5
ms
tR VCC(7)
VCC power up ramp rate
0.2
50
V/msec
Input pulse levels
VCC x 0.1 to VCC x 0.9
Input rise and fall times
10ns
Input and output timing level
VCC x 0.5
X9250
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