參數(shù)資料
型號(hào): X5043S8T1
元件分類(lèi): 電源管理
英文描述: 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
封裝: PLASTIC, SOIC-8
文件頁(yè)數(shù): 18/20頁(yè)
文件大?。?/td> 105K
代理商: X5043S8T1
X5043/X5045
Characteristics subject to change without notice.
7 of 20
REV 1.1.2 5/29/01
www.xicor.com
Table 2. Device Protect Matrix
Figure 6. Read Status Register Sequence
Figure 7. Write Status Register Sequence
WREN CMD
(WEL)
Device Pin
(WP)
Memory Block
Status Register
Protected Area
Unprotected Area
(BL0, BL1, WD0, WD1)
0
x
Protected
x
0
Protected
1
Protected
Writable
0123456789 10 11 12 13 14
76543210
Data Out
CS
SCK
SI
SO
MSB
High Impedance
Instruction
15
0123456789
CS
SCK
SI
SO
High Impedance
Instruction
Data Byte
7654
32
10
10 11 12 13 14 15
Read Memory Array
When reading from the EEPROM memory array, CS is
rst pulled low to select the device. The 8-bit READ
instruction is transmitted to the device, followed by the
8-bit address. Bit 3 of the READ instruction selects the
upper or lower half of the device. After the READ
opcode and address are sent, the data stored in the
memory at the selected address is shifted out on the
SO line. The data stored in memory at the next
address can be read sequentially by continuing to pro-
vide clock pulses. The address is automatically incre-
mented to the next higher address after each byte of
data is shifted out. When the highest address is
reached, the address counter rolls over to address
$000 allowing the read cycle to be continued inde-
nitely. The read operation is terminated by taking CS
high. Refer to the Read EEPROM Array Sequence
(Figure 8).
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