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參數(shù)資料
| 型號(hào)： | X28LV010T-12 |
| 英文描述： | WAFER, IND TEMP, GENERIC SECURE CODE(EMBEDDED CRYPTO PROD) |
| 中文描述： | x8的EEPROM |
| 文件頁(yè)數(shù)： | 13/18頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | X28LV010T-12 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
X28LV010
Characteristics subject to change without notice.
13 of 18
CE Controlled Write Cycle
Page Write Cycle
Notes:
(5) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE
HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively per-
forming a polling operation.
(6) The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to
either the CE or WE controlled write cycle timing.
Address
t
AS
t
OEH
t
WC
t
AH
t
OES
t
WPH
t
CS
t
DS
t
DH
t
CH
CE
WE
OE
High Z
Data Valid
t
CW
Data In
Data Out
WE
OE
(5)
Last Byte
Byte 0
Byte 1
Byte 2
Byte n
Byte n+1
Byte n+2
t
WP
t
WPH
t
BLC
t
WC
CE
Address *
(6)
I/O
*For each successive write within the page write operation, A
8
–A
16
should be the same or writes to an unknown address could occur.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X28LV010T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| X28LV010T-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| X28LV010T-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| X28LV010TI-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| X28LV010TI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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