參數(shù)資料
型號(hào): X20C17
英文描述: High Speed AUTOSTORE NOVRAM(高速帶自動(dòng)存貯的CMOS非易失性靜態(tài)RAM,標(biāo)準(zhǔn)的24腳 DIP 封裝)
中文描述: 高速自動(dòng)存儲(chǔ)NOVRAM(高速帶自動(dòng)存貯的的CMOS非易失性靜態(tài)RAM的,標(biāo)準(zhǔn)的24腳雙酯封裝)
文件頁(yè)數(shù): 4/12頁(yè)
文件大小: 102K
代理商: X20C17
X20C17
4
D.C. OPERATING CHARACTERISTICS
(Over recommended operating conditions unless otherwise specified.)
Limits
Max.
Symbol
Parameter
Min.
Units
Test Conditions
l
CC1
V
CC
Current (Active)
100
mA
WE
= V
IH
,
CE
=
OE
= V
IL
Address Inputs = 0.4V/2.4V Levels
@ f = 20MHz, All I/Os = Open
All I/Os = Open
I
CC2(2)
V
CC
Current During
AUTOSTORE
V
CC
Standby Current
(TTL Input)
V
CC
Standby Current
(CMOS Input)
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
2.5
mA
I
SB1
10
mA
All Inputs = V
IH
, All I/Os = Open
I
SB2
250
μ
A
All Inputs = V
CC
– 0.3V
All I/Os = Open
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
,
CE
= V
IH
I
LI
I
LO
V
IL(1)
V
IH(1)
V
OL
V
OH
10
10
0.8
μ
A
μ
A
V
V
V
V
–1
2
V
CC
+ 1
0.4
I
OL
= 4mA
I
OH
= –4mA
2.4
2015 PGM T04.3
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65
°
C to +135
°
C
Storage Temperature ....................... –65
°
C to +150
°
C
Voltage on any Pin with
Respect to V
SS.......................................
–1V to +7V
D.C. Output Current ...........................................10mA
Lead Temperature (Soldering, 10 seconds)...... 300
°
C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any conditions other than those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
0
°
C
–40
°
C
–55
°
C
Max.
+70
°
C
+85
°
C
+125
°
C
2015 PGM T02.1
Commercial
Industrial
Military
Supply Voltage
Limits
X20C17
4.5V to 5.25V
2015 PGM T03.1
POWER-UP TIMING
Symbol
Parameter
Max.
Units
μ
s
ms
2015 PGM T05
t
PUR(2)
t
PUW(2)
Power-Up to RAM Operation
Power-Up to Nonvolatile Operation
100
5
Notes:
(1) V
IL
min. and V
IH
max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
CAPACITANCE
T
A
= +25
°
C, f = 1MHz, V
CC
= 5V.
Symbol
Test
Max.
Units
Conditions
C
I/O(2)
C
IN(2)
Input/Output Capacitance
Input Capacitance
10
6
pF
pF
V
I/O
= 0V
V
IN
= 0V
2015 PGM T06.2
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