參數(shù)資料
型號: X20C05PM-45
英文描述: High Speed AUTOSTORE⑩ NOVRAM
中文描述: 高速自動存儲⑩NOVRAM
文件頁數(shù): 2/19頁
文件大?。?/td> 82K
代理商: X20C05PM-45
X20C05
2
PIN DESCRIPTIONS
Addresses (A
0
–A
8
)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (
CE
)
The Chip Enable input must be LOW to enable all read/
write operations. When
CE
is HIGH, power consumption
is reduced.
Output Enable (
OE
)
The Output Enable input controls the data output buffers
and is used to initiate read and recall operations. Output
Enable LOW disables a store operation regardless of
the state of
CE
,
WE,
or
NE
.
Data In/Data Out (I/O
0
–I/O
7
)
Data is written to or read from the X20C05 through the
I/O pins. The I/O pins are placed in the high impedance
state when either
CE
or
OE
is HIGH or when
NE
is LOW.
Write Enable (
WE
)
The Write Enable input controls the writing of data to the
RAM.
Nonvolatile Enable (
NE
)
The Nonvolatile Enable input controls the recall function
to the E
2
PROM array.
AUTOSTORE Output (
AS
)
AS
is an open drain output which, when asserted indi-
cates V
CC
has fallen below the AUTOSTORE threshold
(V
ASTH
).
AS
may be wire-ORed with multiple open drain
outputs and used as an interrupt input to a microcontroller.
VCC SENSE
ROW
SELECT
CONTROL
LOGIC
COLUMN
SELECT
&
I/OS
EEPROM ARRAY
HIGH SPEED
512 x 8
SRAM
ARRAY
CE
OE
WE
NE
A3–A6
I/O0–I/O7
AS
A0–A2
A7–A8
RECALL
STORE
3827 FHD F01
PIN NAMES
Symbol
A
0
–A
8
I/O
0
–I/O
7
WE
CE
OE
NE
AS
V
CC
V
SS
NC
Description
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
Nonvolatile Enable
AUTOSTORE Output
+5V
Ground
No Connect
3827 PGM T01
FUNCTIONAL DIAGRAM
相關(guān)PDF資料
PDF描述
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