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參數(shù)資料
| 型號(hào)： | X20C04JI-25 |
| 英文描述： | Nonvolatile Static RAM |
| 中文描述： | 非易失性靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/15頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | X20C04JI-25 |
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X20C04
4
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65
°
C to +135
°
C
Storage Temperature ....................... –65
°
C to +150
°
C
Voltage on any Pin with
Respect to V
SS.......................................
–1V to +7V
D.C. Output Current ...........................................10mA
Lead Temperature (Soldering, 10 seconds)..... 300
°
C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
D.C. OPERATING CHARACTERISTICS
(Over recommended operating conditions unless otherwise specified.)
Limits
Max.
Symbol
Parameter
Min.
Units
Test Conditions
l
CC1
V
CC
Current (Active)
100
mA
NE
=
WE
= V
IH
,
CE
=
OE
= V
IL
Address Inputs = 0.4V/2.4V levels
@ f = 5MHz. All I/Os = Open
All Inputs = V
IH
All I/Os = Open
CE
= V
IH
All Other Inputs = V
IH
, All I/Os = Open
All Inputs = V
CC
– 0.3V
All I/Os = Open
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
,
CE
= V
IH
I
CC2
V
CC
Current During Store
10
mA
I
SB1
V
CC
Standby Current
(TTL Input)
V
CC
Standby Current
(CMOS Input)
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
10
mA
I
SB2
250
μ
A
I
LI
I
LO
V
IL(1)
V
IH(1)
V
OL
V
OH
10
10
0.8
μ
A
μ
A
V
V
V
V
–1
2
V
CC
+ 0.5
0.4
I
OL
= 2.1mA
I
OH
= –400
μ
A
2.4
3825 PGM T04.3
POWER-UP TIMING
Symbol
Parameter
Max.
Units
μ
s
ms
3825 PGM T05
t
PUR(2)
t
PUW(2)
Power-Up to RAM Operation
Power-Up to Nonvolatile Operation
100
5
Notes:
(1) V
IL
min. and V
IH
max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
CAPACITANCE
T
A
= +25
°
C, F = 1MHz, V
CC
= 5V.
Symbol
Test
Max.
Units
Conditions
C
I/O(2)
C
IN(2)
Input/Output Capacitance
Input Capacitance
10
6
pF
pF
V
I/O
= 0V
V
IN
= 0V
3825 PGM T06.1
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
0
°
C
–40
°
C
–55
°
C
Max.
+70
°
C
+85
°
C
+125
°
C
3825 PGM T02.1
Commercial
Industrial
Military
Supply Voltage
Limits
5V
±
10%
X20C04
3825 PGM T03
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| X20C04PMB | Nonvolatile Static RAM |
| X20C04PMB-15 | Nonvolatile Static RAM |
| X20C04S | A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in ; A IRF6678 with Standard Tape and Reel Quantity of 4800 |
| X20C04S-15 | NVRAM (EEPROM Based) |
| X20C04S-20 | NVRAM (EEPROM Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X20C04JM | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X20C04JM-15 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X20C04JM-20 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X20C04JM-25 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
| X20C04JMB | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:Nonvolatile Static RAM |
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