參數(shù)資料
型號: X20C04DM
英文描述: Nonvolatile Static RAM
中文描述: 非易失性靜態(tài)RAM
文件頁數(shù): 1/15頁
文件大?。?/td> 67K
代理商: X20C04DM
X20C04
1
Xicor, Inc. 1992, 1995, 1996 Patents Pending
3825-2.8 7/31/97 T4/C0/D0 SH
Characteristics subject to change without notice
Nonvolatile Static RAM
DESCRIPTION
The Xicor X20C04 is a 512 x 8 NOVRAM featuring a
static RAM overlaid bit-for-bit with a nonvolatile electri-
cally erasable PROM (E
2
PROM). The X20C04 is fabri-
cated with advanced CMOS floating gate technology to
achieve low power and wide power-supply margin. The
X20C04 features the JEDEC approved pinout for byte-
wide memories, compatible with industry standard RAMs,
ROMs, EPROMs, and E
2
PROMs.
The NOVRAM design allows data to be easily trans-
ferred from RAM to E
2
PROM (store) and E
2
PROM to
RAM (recall). The store operation is completed in 5ms or
less and the recall operation is completed in 5
μ
s or less.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
E
2
PROM, and a minimum 1,000,000 store operations to
the E
2
PROM. Data retention is specified to be greater
than 100 years.
FEATURES
High Reliability
—Endurance: 1,000,000 Nonvolatile Store
Operations
—Retention: 100 Years Minimum
Power-on Recall
—E
2
PROM Data Automatically Recalled Into
SRAM Upon Power-up
Lock Out Inadvertent Store Operations
Low Power CMOS
—Standby: 250
μ
A
Infinite E
2
PROM Array Recall, and RAM Read
and Write Cycles
Compatible with X2004
4K
X20C04
512 x 8 Bit
PIN CONFIGURATION
A7
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
NC
NC
NC
OE
NC
CE
I/O7
I/O6
N
N
N
VC
W
N
I1
I2
VS
N
I3
I4
I5
4
3
2
1 32 31 30
14 15 16 17 18 19 20
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
X20C04
(TOP VIEW)
3825 FHD F03
LCC
PLCC
NE
NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
VCC
WE
NC
A8
NC
NC
OE
NC
CE
I/O7
I/O6
I/O5
I/O4
I/O3
X20C04
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
3825 FHD F02
PLASTIC
CERDIP
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