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參數(shù)資料
| 型號： | X0205NN-5BA4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1.25A SCRs |
| 中文描述： | 1.25A的可控硅 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | X0205NN-5BA4 |
X02 Series
4/6
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
SOT-223
SOT-223
TO-92
TO-92
IT(av)(A)
0
25
50
75
100
125
0.8
1.4
1.2
1.0
0.6
0.4
0.2
0.0
Tamb(°C)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K = [Zth(j-a)/Rth(j-a)]
tp(s)
SOT-223
TO-92
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-40
-20
0
20
40
60
80
100
120 140
Tj(°C)
1E-2
1E-1
1E+0
1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IH[Rgk] / IH[Rgk = 1 k
]
Tj = 25°C
Rgk(k
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
VD =Tj = 125°C
dV/dt[Rgk]/dV/dt [Rgk=1k
]
Rgk(k
)
dV/dt[Cgk] / dV/dt[Rgk = 1k ]
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
Cgk(nF)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| X0205YN5BA4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
| X0225MA 1DA2 | 制造商:STMicroelectronics 功能描述:THYRISTOR - Bag |
| X0229503 | 制造商:Schneider Electric 功能描述:SNSW 8A PCB-BTM-ASYM AGCDO NON V4, HIGH CURRENT, CHANGE OVER, PCB , ASYMMETRI |
| X02XXYA1BA2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
| X02XXYA2BL2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1.25A SCRs |
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