參數(shù)資料
型號: X0202NA2BL2
廠商: 意法半導體
英文描述: Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:120ohm; Lead Pitch:10mm; Operating Temp. Max:70 C RoHS Compliant: Yes
中文描述: 1.25A的可控硅
文件頁數(shù): 4/6頁
文件大?。?/td> 147K
代理商: X0202NA2BL2
X02 Series
4/6
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
SOT-223
SOT-223
TO-92
TO-92
IT(av)(A)
0
25
50
75
100
125
0.8
1.4
1.2
1.0
0.6
0.4
0.2
0.0
Tamb(°C)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
K = [Zth(j-a)/Rth(j-a)]
tp(s)
SOT-223
TO-92
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-40
-20
0
20
40
60
80
100
120 140
Tj(°C)
1E-2
1E-1
1E+0
1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IH[Rgk] / IH[Rgk = 1 k
]
Tj = 25°C
Rgk(k
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
VD =Tj = 125°C
dV/dt[Rgk]/dV/dt [Rgk=1k
]
Rgk(k
)
dV/dt[Cgk] / dV/dt[Rgk = 1k ]
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
Cgk(nF)
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X0202NN 5BA4 功能描述:SCR 1.25 Amp 800 Volt RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube