參數(shù)資料
型號: WV3HG32M40SEU403PD4EG
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 32M X 40 DDR DRAM MODULE, 0.6 ns, ZMA200
封裝: ROHS COMPLIANT, SODIMM-200
文件頁數(shù): 8/11頁
文件大?。?/td> 178K
代理商: WV3HG32M40SEU403PD4EG
WV3HG32M40SEU-PD4
November 2006
Rev. 7
ADVANCED
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
DDR2 ICC SPECIFICATION AND CONDITIONS
Symbol Proposed Conditions
665
534
403
Units
ICC0*
Operating one bank active-precharge;
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRAS min(ICC); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
660
630
615
mA
ICC1*
Operating one bank active-read-precharge;
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRAS min(ICC); CKE is
HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is
same as ICC4W
720
690
675
mA
ICC2P**
Precharge power-down current;
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
330
324
mA
ICC2Q**
Precharge quiet standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
STABLE; Data bus inputs are FLOATING
390
375
360
mA
ICC2N**
Precharge standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
STABLE; Data bus inputs are SWITCHING
405
390
375
mA
ICC3P**
Active power-down current;
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
405
390
330
mA
Slow PDN Exit MRS(12) = 1
360
mA
ICC3N**
Active standby current;
All banks open; tCK = tCK(ICC), tRC = tRC(ICC, tRAS = tRAS min(ICC); CKE is HIGH, CS# is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
480
450
mA
ICC4W*
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC),
tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
990
885
780
mA
ICC4R*
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS =
tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs
are SWITCHING; Data pattern is same as ICC4W
990
885
780
mA
ICC5**
Burst auto refresh current;
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,110
1,050
990
mA
ICC6**
Self refresh current;
CK and CK# at 0V; CKE 0.2V; Other control and address bus inputs
are FLOATING; Data bus inputs are FLOATING
Normal
18
mA
ICC7*
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC),
tRC = tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are STABLE during DESELECTs; Data bus inputs are SWITCHING.
1,725
1,470
1,245
mA
ICC specication is based on
ELPIDA components. Other DRAM manufactures specication may be different.
Note:
*: Value calculated as one module rank in this operating condition, and all other module ranks in ICC2P (CKE LOW) mode.
**: Value calculated reects all module ranks in this operating condition.
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WV3HG32M40SEU665PD4IEG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 32Mx40 DDR2 SDRAM UNBUFFERED, ECC, w/PLL