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參數(shù)資料
| 型號(hào)： | WV3HG2128M64EEU806D4SG |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256M X 64 DDR DRAM MODULE, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | WV3HG2128M64EEU806D4SG |
WV3HG2128M64EEU-D4
October 2006
Rev. 1
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
2GB – 2x128Mx64 DDR2 SDRAM UNBUFFERED
DESCRIPTION
The WV3HG2128M64EEU is a 2x128Mx64 Double Data
Rate DDR2 SDRAM high density SO-DIMM. This memory
module consists of sixteen 128Mx8 bit with 8 banks DDR2
Synchronous DRAMs in FBGA packages, mounted on a
200-pin SO-DIMM FR4 substrate.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
Vendor source control options
Industrial temperature option
FEATURES
200-pin, dual in-line memory module (SO-DIMM)
Fast data transfer rates: PC2-6400*, PC2-5300*,
PC2-4200 and PC2-3200
Utilizes 800*, 667*, 533 and 400 Mb/s DDR2
SDRAM components
VCC = 1.8V ±0.1V
VCCSPD = 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Multiple internal device banks for concurrent
operation
Programmable CAS# latency (CL): 3, 4, 5 and 6
Adjustable data-output drive strength
On-die termination (ODT)
Posted CAS# latency: 0, 1, 2, 3 and 4
Serial Presence Detect (SPD) with EEPROM
64ms: 8,192 cycle refresh
Gold edge contacts
Dual Rank
RoHS compliant
JEDEC Package option
200 Pin (SO-DIMM)
PCB – 30.00mm (1.181") TYP.
OPERATING FREQUENCIES
PC2-3200
PC2-4200
PC2-5300*
PC2-6400*
Clock Speed
200MHz
266MHz
333MHz
400MHz
CL-tRCD-tRP
3-3-3
4-4-4
5-5-5
6-6-6
* Consult factory for availability
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PDF描述 |
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| WV3HG2128M64EEU403D6IMG | 256M X 64 DDR DRAM MODULE, 0.6 ns, DMA240 |
| WV3HG2128M64EEU534D6SG | 256M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 |
| WV3HG2128M72AER403D6FMG | 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| WV3HG2128M72AER403D6MG | 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| WV3HG2128M72AER403D6SF | 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3HG2128M64EEU806D6IMG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG2128M64EEU806D6ISG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG2128M64EEU806D6MG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG2128M64EEU806D6SG | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG2128M64EEU-D4 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2GB - 2x128Mx64 DDR2 SDRAM UNBUFFERED |
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