參數(shù)資料
型號: WV3HG128M72AER403D6MG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁數(shù): 7/10頁
文件大小: 181K
代理商: WV3HG128M72AER403D6MG
WV3HG128M72AER-D6
ADVANCED
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2006
Rev. 1
DDR2 SDRAM COMPONENT AC TIMING PARAMETERS & SPECIFICATIONS
0°C ≤ TA ≤ +70°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
AC CHARACTERISTICS
534
403
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNIT
Clock
Clock cycle time
CL = 4
tCK (4)
3,750
8,000
5,000
8,000
ps
CL = 3
tCK (3)
5,000
8,000
5,000
8,000
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
Half clock period
tHP
MIN (tCH, tCL)
MIN (tCH, tCL)ps
Data
DQ output access time from CK/CK#
tAC
-500
+500
-600
+600
ps
Data-out high-impedance window from CK/CK#
tHZ
tAC MAX
ps
Data-out low-impedance window from CK/CK#
tLZ
tAC MIN
tAC MAX
tAC MIN
tAC MAX
ps
DQ and DM input setup time relative to DQS
tDS
100
150
ps
DQ and DM input hold time relative to DQS
tDH
225
275
ps
A DQ and DM input pulse width (for each input)
tDIPW
0.35
tCK
Data hold skew factor
tQHS
400
450
ps
DQ…DQS hold, DQS to rst DQ to go nonvalid, per access
tQH
tHP - tQHS
ps
Data
Strobe
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS output access time from CK/CK#
tDQSCK
-450
+450
-500
+500
ps
DQS falling edge to CK rising … setup time
tDSS
0.2
tCK
DQS falling edge from CK rising … hold time
tDSH
0.2
tCK
DQS…DQ skew, DQS to last DQ valid, per group,
per access
tDQSQ
300
350
ps
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
DQS write preamble
tWPRE
0.35
tCK
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write command to rst DQS latching transition
tDQSS
WL - 0.25
WL + 0.25
WL - 0.25
WL + 0.25
tCK
Continued on next page
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