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參數(shù)資料
| 型號： | WV3EG6434S262BD4MF |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | LEAD FREE, SO-DIMM-200 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 273K |
| 代理商： | WV3EG6434S262BD4MF |
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WV3EG6434S-BD4
April 2005
Rev. 0
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC
OPERATING CONDITIONS
0°C ≤ TA ≤ 70°C, VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V
Parameter
Symbol
335
262
265
Unit
Note
Min
Max
Min
Max
Min
Max
Row cycle time
tRC
60
65
ns
Refresh row cycle time
tRFC
72
75
ns
Row active time
tRAS
42
70K
45
120K
45
120K
ns
RAS to CAS delay
tRCD
18
20
ns
Row precharge time
tRP
18
20
ns
Row active to Row active delay
tRRD
12
15
ns
Write recovery time
tWR
15
ns
Last data in to Read command
tWTR
111
tCK
Col. address to Col. address delay
tCCD
111
tCK
Clock cycle time
CL=2.0
tCK
7.5
12
7.5
12
10
12
ns
5
CL=2.5
6
12
7.5
12
7.5
12
ns
5
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQS-out access time from CK/CK#
tDQSCK
-0.6
+0.6
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK#
tAC
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.45
-
0.5
-
0.5
ns
5
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
000
ns
2
DQS-in hold time
tWPRE
0.25
tCK
DQS falling edge to CK rising-setup time
tDSS
0.2
tCK
DQS falling edge from CK rising-hold time
tDSH
0.2
tCK
DQS-in high level width
tDQSH
0.35
tCK
DQS-in low level width
tDQSL
0.35
tCK
DQS-in cycle time
tDSC
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Address and Control Input setup time (fast)
tIS
0.75
0.9
ns
6
Address and Control Input hold time (fast)
tIH
0.75
0.9
ns
6
Address and Control Input setup time (slow)
tIS
0.8
1.0
ns
6
Address and Control Input hold time (slow)
tIH
0.8
1.0
ns
6
Data-out high impedence time from CK/CK#
tHZ
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
Data-out low impedence time from CK/CK#
tLZ
-0.7
+0.7
-0.75
+0.75
-0.75
+0.75
ns
Input Slew Rate (for input only pins)
tSL(I)
0.5
V/ns
6
Input Slew Rate (for I/O pins)
tSL(IO)
0.5
V/ns
7
Output Slew Rate (x4,x8)
tSL(O)
1.0
4.5
1.0
4.5
1.0
4.5
V/ns
Output Slew Rate Matching Ratio (rise to fall)
tSLMR
0.67
1.5
0.67
1.5
0.67
1.5
Note: AC Timing Parameters are based on Samsung components. Other DRAM Manufacturers parameters may be different.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3EG6434S265BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6434S335BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6434S-BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL |
| WV3EG6437S335D4IMG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED |
| WV3EG6437S335D4ING | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED |
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