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參數(shù)資料
| 型號： | WV3EG265M72EFSU335D4IMG |
| 英文描述： | 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| 中文描述： | 1GB的- 2x64Mx72 DDR內(nèi)存，無緩沖，鎖相環(huán)，F(xiàn)BGA封裝 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 183K |
| 代理商： | WV3EG265M72EFSU335D4IMG |
WV3EG265M72EFSU-D4
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2006
Rev. 0
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS
(Continued)
V
CC
= V
CCQ
= +2.5V ±0.2V
AC CHARACTERISTICS
335
262
265
UNITS
PARAMETER
Exit self regresh to read command
Refresh interval time
Output DQS vaild window
SYMBOL
t
XSRD
t
REFI
t
QH
MIN
200
MAX
MIN
200
MAX
MIN
200
MAX
t
CK
μs
ns
7.8
7.8
7.8
t
HP
-t
QHS
t
CLmin or
CHmin
t
HP
-t
QHS
t
CLmin or
CHmin
t
HP
-t
QHS
t
CLmin or
CHmin
Clock half period
t
HP
ns
Data hold skew factor
DQS write postamble
Active Read with auto precharge command
t
QHS
t
WPST
t
RAP
0.55
0.6
0.75
0.6
0.75
0.6
ns
ns
ns
0.4
18
0.4
20
0.4
20
Auto precharge Write recovery + Precharge time
t
RAL
t
WR
/t
CK
+
t
RP
/t
CK
t
WR
/t
CK
+
t
RP
/t
CK
t
WR
/t
CK
+
t
RP
/t
CK
t
CK
* AC specification is based on
SAMSUNG
components. Other DRAM manufactures specification may be different.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3EG265M72EFSU335D4IN | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4ING | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4IS | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4ISG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4M | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
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