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參數(shù)資料
| 型號： | WV3EG265M72EFSU335D4IM |
| 英文描述： | 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| 中文描述： | 1GB的- 2x64Mx72 DDR內(nèi)存，無緩沖，鎖相環(huán)，F(xiàn)BGA封裝 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 183K |
| 代理商： | WV3EG265M72EFSU335D4IM |
WV3EG265M72EFSU-D4
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2006
Rev. 0
ADVANCED
DC ELECTRICAL CHARACTERISTICS
PARAMETER/CONDITION
Supply Voltage DRR266/DDR333 (nominal V
CC
2.5V)
I/O Supply Voltage DRR266/DDR333 (nominal V
CC
2.5V
I/O Reference Voltage
I/O Termination Voltage
Input Logic High Voltage
Input Logic Low Voltage
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
Input crossing point voltage, CK and CK#
SYMBOL
V
CC
V
CCQ
V
REF
V
TT
V
IH(DC)
V
IL(DC)
V
IN(DC)
V
ID(DC)
V
IX(DC)
MIN
2.3
2.3
MAX
2.7
2.7
UNITS
V
V
V
V
V
V
V
V
V
Notes
0.49 × V
CC
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
0.3
0.3
0.51 × V
CC
V
REF
+ 0.04
V
CC
+ 0.30
V
REF
- 0.15
V
REF
+ 0.30
V
REF
+ 0.60
V
REF
- 0.60
1
2
3
Input leakage current
Addr CAS#,
RAS#, WE#
CS#, CKE
CK, CK#
DM
I
I
-36
36
μA
-18
-10
-4
-10
-16.8
16.8
-9
9
18
10
4
10
μA
μA
μA
μA
mA
mA
mA
mA
Output leakage current
Output high current (normal strength) V
OUT
= v +0.84V
Output high current (normal strength) V
OUT
= V
TT
- 0.84V
Output high current (half strength) V
OUT
= V
TT
- 0.45V
Output high current (half strength) V
OUT
= V
TT
- 0.45V
Notes:
1 V
REF
is expected to equal to 0.5*V
CCQ
of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on V
REF
may not exceed +/-2 percent of the
DC value.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
and must track variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CK and the input level of CK#.
I
OZ
I
OH
I
OL
I
OH
I
OL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
V
REF
T
STG
T
A
P
D
I
OS
Parameter
Voltage on V
CC
pin relative to V
SS
Voltage on V
CC
& V
CCQ
supply relative to V
SS
Voltage of V
REF
supply relative to V
SS
Storage Temperature
Operating temperature
Power dissipation
Short circuit output current
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
0 ~ 70
18
50
Units
V
V
V
°C
°C
W
mA
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional ioeration should be restricted to recommended operation conditions.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3EG265M72EFSU335D4IMG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4IN | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4ING | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4IS | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
| WV3EG265M72EFSU335D4ISG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA |
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