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參數(shù)資料
| 型號： | WSF512K16-90H2IA |
| 英文描述： | 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 |
| 中文描述： | 512KX16的SRAM /閃存盤，貼片5962-96901 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 589K |
| 代理商： | WSF512K16-90H2IA |
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WSF512K16-XXX
May 2006
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C ≤ T
A
≤ +125°C
Symbol
Conditions
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
I
LO
SCS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
I
CCx16
SCS# = V
IL
, OE# = FCS# = V
IH
, f = 5MHz, V
CC
= 5.5
I
SB
FCS# = SCS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
V
OL
I
OL
= 6mA, V
CC
= 4.5
V
OH
I
OH
= -1.0mA, V
CC
= 4.5
I
CC1
FCS# = V
IL
, OE# = SCS# = V
IH
I
CC2
FCS# = V
IL
, OE# = SCS# = V
IH
V
OL
I
OL
= 8.0mA, V
CC
= 4.5
V
OH1
I
OH
= -2.5 mA, V
CC
= 4.5
V
LKO
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 16 Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash V
CC
Active Current for Read (1)
Flash V
CC
Active Current for Program or Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Low V
CC
Lock Out Voltage
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Min
Max
10
10
330
45
0.4
Unit
μA
μA
mA
mA
V
V
mA
mA
V
V
V
2.4
130
150
0.45
0.85 x V
CC
3.2
4.2
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
7.0
150
7.0
Unit
°C
°C
V
°C
V
-0.5
Parameter
Flash Data Retention
Flash Endurance (write/erase cycles)
NOTES: 1. Stresses above the absolute maximum rating may cause permanent
damage to the device. Extended operation at the maximum levels may
degrade performance and affect reliability.
20 years
100,000
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
V
CC
Input High Voltage
Input Low Voltage
Min
4.5
2.2
-0.5
Max
5.5
Unit
V
V
V
V
IH
V
IL
V
CC
+ 0.3
+0.8
SRAM TRUTH TABLE
OE#
SWE#
X
X
L
H
H
H
X
L
SCS#
H
L
L
L
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
CAPACITANCE
T
A
= +25°C
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Test
OE# Capacitance
F/S WE1-2# Capacitance
F/S CS1-2# Capacitance
Data I/O Capacitance
Address Input Capacitance
This parameter is guaranteed by design but not tested.
Condition
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
Max Unit
50
20
20
20
50
pF
pF
pF
pF
pF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WSF512K16-90H2M | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX16 SRAM/FLASH MODULE, SMD 5962-96901 |
| WSF512K16-90H2MA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX16 SRAM/FLASH MODULE, SMD 5962-96901 |
| WSF512K16-XG2X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/Flash MCP |
| WSF512K16-XH2X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/Flash MCP |
| WSF512K16-XXX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX16 SRAM/FLASH MODULE, SMD 5962-96901 |
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