參數(shù)資料
型號(hào)： WSF128K32-90H2IA
英文描述： 128KX32 SRAM/FLASH MODULE
中文描述： 128KX32的SRAM /閃存模塊
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 451K
代理商： WSF128K32-90H2IA
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WSF128K32-XH2X
October 2004
Rev. 4
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
PRELIMINARY
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
SCS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
SCS# = V
IL
, OE# = FCS# = V
IH
, f = 5MHz, V
CC
= 5.5
FCS# = SCS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
FCS# = V
IL
, OE# = SCS# = V
IH
FCS# = V
IL
, OE# = SCS# = V
IH
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 32 Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash V
CC
Active Current for Read (1)
Flash V
CC
Active Current for Program or
Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Output High Voltage
Flash Low V
CC
Lock Out Voltage
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Symbol
I
LI
I
LO
I
CCx32
I
SB
V
OL
V
OH
I
CC1
I
CC2
Min
Max
10
10
670
80
0.4
Unit
μA
μA
mA
mA
V
V
mA
mA
2.4
220
280
V
OL
V
OH1
V
OH2
V
LKO
I
OL
= 8.0mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
I
OH
= -100 μA, V
CC
= 4.5
0.45
V
V
V
V
0.85 x V
CC
V
CC
-0.4
3.2
SRAM TRUTH TABLE
OE#
SWE#
X
X
L
H
H
H
X
L
SCS#
H
L
L
L
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
NOTE:
1. FCS# must remain high when SCS# is low.
CAPACITANCE
Ta = +25°C
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Parameter
OE# capacitance
F/S WE
1-4
# capacitance
F/S CS# capacitance
D
0-31
capacitance
A
0-16
capacitance
This parameter is guaranteed by design but not tested.
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max Unit
80
30
50
30
80
pF
pF
pF
pF
pF
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
7.0
150
7.0
Unit
°C
°C
V
°C
V
-0.5
Parameter
Flash Data Retention
Flash Endurance (write/erase cycles)
NOTE:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
10 years
10,000
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
V
CC
Input High Voltage
V
IH
Input Low Voltage
V
IL
Min
4.5
2.2
-0.5
Max
5.5
Unit
V
V
V
V
CC
+ 0.3
+0.8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WSF128K32-90H2M 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128KX32 SRAM/FLASH MODULE
WSF128K32-90H2MA 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128KX32 SRAM/FLASH MODULE
WSF128K32-XH2X 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128KX32 SRAM/FLASH MODULE
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