參數(shù)資料
型號： WSF128K16-72G1TMA
元件分類： SRAM
英文描述： 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
中文描述： 128Kx16的SRAM /閃存盤，貼片5962-96900
文件頁數(shù)： 3/16頁
文件大?。?/td> 632K
代理商： WSF128K16-72G1TMA
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WSF128K16-XXX
May 2003
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C ≤ T
A
≤ +125°C
Symbol
Conditions
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
I
LO
SCS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
I
CCx16
SCS# = V
IL
, OE# = FCS# = V
IH
, f = 5MHz, V
CC
= 5.5
I
SB
FCS# = SCS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
V
OL
I
OL
= 2.1mA, V
CC
= 4.5
V
OH
I
OH
= -1.0mA, V
CC
= 4.5
I
CC1
FCS# = V
IL
, OE# = SCS# = V
IH
I
CC2
FCS# = V
IL
, OE# = SCS# = V
IH
V
OL
I
OL
= 8.0mA, V
CC
= 4.5
V
OH1
I
OH
= -2.5 mA, V
CC
= 4.5
V
OH2
I
OH
= -100 μA, V
CC
= 4.5
V
LKO
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 16 Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash V
CC
Active Current for Read (1)
Flash V
CC
Active Current for Program or Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Output High Voltage
Flash Low V
CC
Lock Out Voltage
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Min
Max
10
10
360
40
0.4
Unit
μA
μA
mA
mA
V
V
mA
mA
V
V
V
V
2.4
100
130
0.45
0.85 x V
CC
V
CC
-0.4
3.2
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
7.0
150
7.0
Unit
°C
°C
V
°C
V
-0.5
Parameter
Flash Data Retention
Flash Endurance (write/erase cycles)
NOTES: 1. Stresses above the absolute maximum rating may cause permanent
damage to the device. Extended operation at the maximum levels may
degrade performance and affect reliability.
10 years
10,000
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
V
CC
Input High Voltage
Input Low Voltage
Min
4.5
2.2
-0.5
Max
5.5
Unit
V
V
V
V
IH
V
IL
V
CC
+ 0.3
+0.8
SRAM TRUTH TABLE
OE#
SWE#
X
X
L
H
H
H
X
L
SCS#
H
L
L
L
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
CAPACITANCE
T
A
= +25°C
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Test
OE# Capacitance
F/S WE1-2# Capacitance
F/S CS1-2# Capacitance
SD0-15/FD0-15 Capacitance
A0 - A16 Capacitance
This parameter is guaranteed by design but not tested.
Condition
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
V
IN
= 0V, f = 1.0MHz
Max Unit
50
20
20
20
50
pF
pF
pF
pF
pF
相關(guān)PDF資料
PDF描述
WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
WSF128K16-37G1TC 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
WSF128K16-37G1TCA 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
WSF128K16-37G1TI 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
WSF128K16-72G2C SRAM/EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WSF128K16-72G1UC 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 68 CQFP - Bulk
WSF128K16-72G1UCA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900
WSF128K16-72G1UI 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 68 CQFP - Bulk
WSF128K16-72G1UIA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900
WSF128K16-72G1UM 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 68 CQFP - Bulk 制造商:White Electronic Designs 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 120NS FLASH, 68 CQFP - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*