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參數(shù)資料
| 型號： | WSE128K16-73G2TM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQMA68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 635K |
| 代理商： | WSE128K16-73G2TM |
WSE128K16-XXX
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
March 2005
Rev. 3
FIGURE 3 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
SRAM AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Read Cycle
Symbol
-35
-45
-70
Units
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
35
45
70
ns
Address Access Time
tAA
35
45
70
ns
Output Hold from Address Change
tOH
005
ns
Chip Select Access Time
tACS
35
45
70
ns
Output Enable to Output Valid
tOE
20
25
35
ns
Chip Select to Output in Low Z
tCLZ1
335
ns
Output Enable to Output in Low Z
tOLZ1
005
ns
Chip Disable to Output in High Z
tCHZ1
20
25
ns
Output Disable to Output in High Z
tOHZ1
20
25
ns
1. This parameter is guaranteed by design but not tested.
SRAM AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Write Cycle
Symbol
-35
-45
-70
Units
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
35
45
70
ns
Chip Select to End of Write
tCW
25
30
60
ns
Address Valid to End of Write
tAW
25
30
60
ns
Data Valid to End of Write
tDW
20
25
30
ns
Write Pulse Width
tWP
25
30
50
ns
Address Setup Time
tAS
005
ns
Address Hold Time
tAH
005
ns
Output Active from End of Write
tOW1
445
ns
Write Enable to Output in High Z
tWHZ1
20
25
ns
Data Hold Time
tDH
000
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C
= 50 pf
eff
I OL
V ≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
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|---|---|
| WSE128K16-73G2TMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-73H1C | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
| WSE128K16-73H1CA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1I | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
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