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| 型號(hào)： | WSE128K16-73G2TI |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQFP68 |
| 封裝： | 22.40 MM, CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大小： | 299K |
| 代理商： | WSE128K16-73G2TI |
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White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
128KX16 SRAM/EEPROM MODULE PRELIMINARY*
FEATURES
s Access Times of 35ns (SRAM) and 150ns (EEPROM)
s Access Times of 45ns (SRAM) and 120ns (EEPROM)
s Access Times of 70ns (SRAM) and 300ns (EEPROM)
s Packaging
66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic
HIP (H1) (Package 400)
68 lead, Hermetic CQFP (G2T), 22mm (0.880") square
(Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ
footprint (Fig. 2)
s 128Kx16 SRAM
s 128Kx16 EEPROM
s Organized as 128Kx16 of SRAM and 128Kx16 of EEPROM
Memory with separate Data Buses
s Both blocks of memory are User Configurable as 256Kx8
s Low Power CMOS
s Commercial, Industrial and Military Temperature Ranges
s TTL Compatible Inputs and Outputs
s Built-in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
s Weight - 13 grams typical
EEPROM MEMORY FEATURES
s Write Endurance 10,000 Cycles
s Data Retention at 25
°C, 10 Years
s Low Power CMOS Operation
s Automatic Page Write Operation
s Page Write Cycle Time 10ms Max.
s Data Polling for End of Write Detection
s Hardware and Software Data Protection
s TTL Compatible Inputs and Outputs
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
EWE ECS
E WE ECS
SWE SCS
128K x 8
SRAM
8
SD 0-7
1
128K x 8
SRAM
8
SD 8-15
2
128K x 8
EEPROM
8
ED 0-7
1
128K x 8
EEPROM
8
ED 8-15
2
A 0- 16
OE
SWE SCS
BLOCK DIAGRAM
PIN DESCRIPTION
ED0-15
EEPROM Data Inputs/Outputs
SD0-15
SRAM Data Inputs/Outputs
A0-16
Address Inputs
SWE1-2
SRAM Write Enable
SCS1-2
SRAM Chip Selects
OE
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
EWE1-2
EEPROM Write Enable
ECS1-2
EEPROM Chip Select
SD8
SD9
SD10
A13
A14
A15
A16
NC
SD0
SD1
SD2
SWE2
SCS2
GND
SD11
A10
A11
A12
VCC
SCS1
NC
SD3
SD15
SD14
SD13
SD12
OE
NC
SWE1
SD7
SD6
SD5
SD4
ED8
ED9
ED10
A6
A7
NC
A8
A9
ED0
ED1
ED2
VCC
ECS2
EWE2
ED11
A3
A4
A5
EWE1
ECS1
GND
ED3
ED15
ED14
ED13
ED12
A0
A1
A2
ED7
ED6
ED5
ED4
11
22
33
44
55
66
1
12
23
34
45
56
TOP VIEW
FIG.1
PIN CONFIGURATION FOR WSE128K16-XH1X
July 1999 Rev. 3
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| WS512K8-45CIA | 512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, DMA32 |
| WE128K32-150G1UQ | 128K X 32 EEPROM 5V MODULE, 150 ns, CQFP68 |
| WE128K32-200G1UQ | 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSE128K16-73G2TIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73G2TM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73G2TMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-73H1C | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
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